SEFY140C Datasheet and Replacement
Type Designator: SEFY140C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 16 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 145 nS
Cossⓘ - Output Capacitance: 550 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.077 Ohm
Package: TO-257AA
- MOSFET Cross-Reference Search
SEFY140C Datasheet (PDF)
sefy140c.pdf

SEMITRONICS CORP. SEFY140C 64 Commercial Street, Freeport, N.Y. 11520 N-Channel MOSFET Phone: (516) 623-9400 Fax. (516) 623-6954 FEATURES Isolated Case Ceramic Eyelets - Hermetically Sealed Hermetically Sealed Package - Electrically Isolated Improved Gate, Avalanche and - Ceramic Eyelets dynamic dv.dt Ruggedness Hermetically Sealed M
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: CWDM3011P | SM4186T9RL | WMM07N65C4 | NCE30P12BS | NP180N04TUJ | APT10021JFLL | SSW65R190S2
Keywords - SEFY140C MOSFET datasheet
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History: CWDM3011P | SM4186T9RL | WMM07N65C4 | NCE30P12BS | NP180N04TUJ | APT10021JFLL | SSW65R190S2



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