SEFY140C MOSFET. Datasheet pdf. Equivalent
Type Designator: SEFY140C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 16 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 59 nC
trⓘ - Rise Time: 145 nS
Cossⓘ - Output Capacitance: 550 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.077 Ohm
Package: TO-257AA
SEFY140C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SEFY140C Datasheet (PDF)
sefy140c.pdf
SEMITRONICS CORP. SEFY140C 64 Commercial Street, Freeport, N.Y. 11520 N-Channel MOSFET Phone: (516) 623-9400 Fax. (516) 623-6954 FEATURES Isolated Case Ceramic Eyelets - Hermetically Sealed Hermetically Sealed Package - Electrically Isolated Improved Gate, Avalanche and - Ceramic Eyelets dynamic dv.dt Ruggedness Hermetically Sealed M
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918