All MOSFET. SES759 Datasheet

 

SES759 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SES759
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 140 nC
   trⓘ - Rise Time: 86 nS
   Cossⓘ - Output Capacitance: 208 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO-257

 SES759 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SES759 Datasheet (PDF)

 ..1. Size:41K  semitronics
 ses759.pdf

SES759 SES759

SEMITRONICS CORP. SES759 64 Commercial Street, Freeport, N.Y. 11520 SMPS MOSFET Phone: (516) 623-9400 Fax. (516) 623-6954 FEATURES PACKAGE Isolated Case Hermetically Sealed Package Improved Gate, Avalanche and dynamic dv.dt Ruggedness Ease of Paralleling MIL STX Screening Available APPLICATIONS High Reliability Power Supplies CASE OU

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
Back to Top