IRF7403PBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF7403PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 8.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 57 nC
trⓘ - Rise Time: 37 nS
Cossⓘ - Output Capacitance: 450 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: SO-8
IRF7403PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF7403PBF Datasheet (PDF)
irf7403pbf.pdf
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PD - 95301IRF7403PbFHEXFET Power MOSFETl Generation V TechnologyAl Ultra Low On-Resistance A1 8S Dl N-Channel MosfetVDSS = 30V2 7S Dl Surface Mount3 6l Available in Tape & ReelS Dl Dynamic dv/dt Rating45G DRDS(on) = 0.022l Fast Switchingl Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced proc
irf7403pbf.pdf
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PD - 95301IRF7403PbFHEXFET Power MOSFETl Generation V TechnologyAl Ultra Low On-Resistance A1 8S Dl N-Channel MosfetVDSS = 30V2 7S Dl Surface Mount3 6l Available in Tape & ReelS Dl Dynamic dv/dt Rating45G DRDS(on) = 0.022l Fast Switchingl Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced proc
irf7403.pdf
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PD - 9.1245BPRELIMINARY IRF7403HEXFET Power MOSFET Generation V TechnologyA Ultra Low On-Resistance A1 8S D N-Channel MosfetVDSS = 30V2 7S D Surface Mount3 6 Available in Tape & ReelS D Dynamic dv/dt Rating4 5G DRDS(on) = 0.022 Fast SwitchingTop ViewDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingte
irf7406pbf.pdf
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PD - 95302IRF7406PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-ResistanceA1 8l P-Channel Mosfet S DVDSS = -30V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Dynamic dv/dt Rating4 5G DRDS(on) = 0.045l Fast Switchingl Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced proces
irf740lcpbf.pdf
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PD - 94880IRF740LCPbF Lead-Free12/10/03Document Number: 91052 www.vishay.com1IRF740LCPbFDocument Number: 91052 www.vishay.com2IRF740LCPbFDocument Number: 91052 www.vishay.com3IRF740LCPbFDocument Number: 91052 www.vishay.com4IRF740LCPbFDocument Number: 91052 www.vishay.com5IRF740LCPbFDocument Number: 91052 www.vishay.com6IRF740LCPbFDocument Nu
irf7402pbf.pdf
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PD - 95202IRF7402PbFHEXFET Power MOSFET Generation V TechnologyA Ultra Low On-ResistanceA1 8S D N-Channel MOSFETVDSS = 20V2 7S D Very Small SOIC Package Low Profile (
irf7406gpbf.pdf
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PD -96259IRF7406GPbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-ResistanceAl P-Channel Mosfet1 8S Dl Surface MountVDSS = -30V2 7S Dl Available in Tape & Reell Dynamic dv/dt Rating 3 6S Dl Fast Switching4 5G Dl Lead-FreeRDS(on) = 0.045l Halogen-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize
irf7404qpbf.pdf
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PD - 96127AIRF7404QPbFHEXFET Power MOSFETl Advanced Process TechnologyA1 8l Ultra Low On-ResistanceS DVDSS = -20Vl P Channel MOSFET2 7S Dl Surface Mount3 6S Dl Available in Tape & Reel4 5l 150C Operating TemperatureG DRDS(on) = 0.040l Lead-FreeTop ViewDescriptionThese HEXFET Power MOSFET's in packageutilize the lastest processing techniqu
irf740as-l.pdf
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PD- 95532SMPS MOSFETIRF740AS/LPbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 400V 0.55 10Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance and D 2
irf740spbf.pdf
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PD - 95204IRF740SPbF Lead-Free4/29/04Document Number: 91055 www.vishay.com1IRF740SPbFDocument Number: 91055 www.vishay.com2IRF740SPbFDocument Number: 91055 www.vishay.com3IRF740SPbFDocument Number: 91055 www.vishay.com4IRF740SPbFDocument Number: 91055 www.vishay.com5IRF740SPbFDocument Number: 91055 www.vishay.com6IRF740SPbFD2Pak Package Outli
irf7401pbf.pdf
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PD - 95724IRF7401PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-ResistanceAA1 8l N-Channel MosfetS DVDSS = 20Vl Surface Mount 2 7S Dl Available in Tape & Reel3 6S Dl Dynamic dv/dt Rating4 5G DRDS(on) = 0.022l Fast Switchingl Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced proc
irf740as.pdf
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PD- 92005SMPS MOSFETIRF740AS/LHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 400V 0.55 10A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance and D 2 TO-262 PakAvalanch
irf740a.pdf
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PD- 94828SMPS MOSFETIRF740APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 400V 0.55 10Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvalanch
irf7404pbf-1.pdf
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IRF7404TRPbF-1HEXFET Power MOSFETVDS -20 VA1 8S DRDS(on) max 0.04 2 7(@V = -4.5V) S DGSQg 50 nC 3 6S DID 4 5-6.7 A G D(@T = 25C)ATop View SO-8Features BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally Frie
irf7401pbf-1.pdf
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IRF7401PbF-1HEXFET Power MOSFETVDS 20 VAA1 8S DRDS(on) max 0.022 2 7(@V = 4.5V) S DGSQg 48 nC3 6S DID 4 58.7 A G D(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally Fri
irf740alpbf irf740aspbf.pdf
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PD- 95532SMPS MOSFETIRF740AS/LPbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 400V 0.55 10Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance and2
irf7404.pdf
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PD - 9.1246CIRF7404HEXFET Power MOSFET Generation V TechnologyA1 8S D Ultra Low On-ResistanceVDSS = -20V2 7 P-Channel MosfetS D Surface Mount3 6S D Available in Tape & Reel4 5G DRDS(on) = 0.040 Dynamic dv/dt Rating Fast SwitchingTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to a
irf7406pbf-1.pdf
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IRF7406TRPbF-1HEXFET Power MOSFETVDS -30 VA1 8S DRDS(on) max 0.045 2 7(@V = -10V) S DGSQg (max) 59 nC 3 6S DID 45G D-5.8 A(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environment
irf7401.pdf
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PD - 9.1244CIRF7401HEXFET Power MOSFET Generation V TechnologyAA1 8 Ultra Low On-Resistance S DVDSS = 20V2 7 N-Channel MosfetS D Surface Mount3 6S D Available in Tape & Reel4 5G DRDS(on) = 0.022 Dynamic dv/dt Rating Fast SwitchingTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to
irf7402.pdf
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PD - 93851AIRF7402HEXFET Power MOSFET Generation V TechnologyAA Ultra Low On-Resistance 1 8S D N-Channel MOSFETVDSS = 20V2 7S D Very Small SOIC Package3 6S D Low Profile (
irf7404pbf.pdf
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PD - 95203IRF7404PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance A1 8S Dl P-Channel MosfetVDSS = -20V2 7S Dl Surface Mount3 6Sl Available in Tape & Reel D4 5l Dynamic dv/dt RatingG DRDS(on) = 0.040l Fast SwitchingTop Viewl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced proces
irf740.pdf
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PD - 94872IRF740PbF Lead-Free12/5/03Document Number: 91053 www.vishay.com1IRF740PbFDocument Number: 91053 www.vishay.com2IRF740PbFDocument Number: 91053 www.vishay.com3IRF740PbFDocument Number: 91053 www.vishay.com4IRF740PbFDocument Number: 91053 www.vishay.com5IRF740PbFDocument Number: 91053 www.vishay.com6IRF740PbFTO-220AB Package Outline
irf7406.pdf
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PD - 9.1247CIRF7406PRELIMINARYHEXFET Power MOSFET Generation V TechnologyA1 8 Ultra Low On-Resistance S DVDSS = -30V2 7 P-Channel MosfetS D Surface Mount3 6S D Available in Tape & Reel4 5G DRDS(on) = 0.045 Dynamic dv/dt Rating Fast SwitchingTop V iewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing te
irf740s.pdf
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IRF740S N - CHANNEL 400V - 0.48 - 10A- D2PAKPowerMESH MOSFETTYPE VDSS RDS(on) IDIRF740S 400 V
irf740.pdf
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IRF740 N - CHANNEL 400V - 0.48 - 10 A - TO-220PowerMESH MOSFETTYPE VDSS RDS(on) IDIRF740 400 V
irf740b irfs740b.pdf
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November 2001IRF740B/IRFS740B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10A, 400V, RDS(on) = 0.54 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC)planar, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been especially tailored to
irf740a.pdf
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Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.55 Rugged Gate Oxide Technology Lower Input CapacitanceID = 10 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 0.437 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va
irf740b.pdf
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IRF740Bwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal designVDS (V) at TJ max. 450- Low area specific on-resistanceRDS(on) max. () at 25 C VGS = 10 V 0.6- Low input capacitance (Ciss)AvailableQg max. (nC) 30- Reduced capacitive switching lossesQgs (nC) 4- High body diode ruggednessQgd (nC) 7- Avalanche energy rated (U
irf740a sihf740a.pdf
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IRF740A, SiHF740AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 400RequirementAvailableRDS(on) ()VGS = 10 V 0.55 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 36COMPLIANTRuggednessQgs (nC) 9.9 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 16and CurrentConfigur
irf740spbf sihf740s.pdf
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IRF740S, SiHF740SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 400 Surface MountRDS(on) ()VGS = 10 V 0.55 Available in Tape and Reel Qg (Max.) (nC) 63 Dynamic dV/dt RatingQgs (nC) 9.0 Repetitive Avalanche Rated Fast SwitchingQgd (nC) 32 Ease of ParallelingConfiguration Sin
irf740lc irf740lcpbf sihf740lc.pdf
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IRF740LC, SiHF740LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 400 Reduced Gate Drive Requirement AvailableRDS(on) ()VGS = 10 V 0.55 Enhanced 30 V VGS RatingRoHS*COMPLIANTQg (Max.) (nC) 39 Reduced Ciss, Coss, CrssQgs (nC) 10 Extremely High Frequency OperationQgd (nC) 19 Repetitive Avalanche Rated Comp
irf740as sihf740as irf740al sihf740al.pdf
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IRF740AS, SiHF740AS, IRF740AL, SiHF740ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 400DefinitionRDS(on) ()VGS = 10 V 0.55 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 36 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 9.9RuggednessQgd (nC) 16 Fully Characterized Capac
irf740 sihf740.pdf
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IRF740, SiHF740Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.55RoHS* Fast SwitchingQg (Max.) (nC) 63 COMPLIANT Ease of ParallelingQgs (nC) 9.0Qgd (nC) 32 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDES
irf740lc sihf740lc.pdf
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IRF740LC, SiHF740LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 400 Reduced Gate Drive Requirement AvailableRDS(on) ()VGS = 10 V 0.55 Enhanced 30 V VGS RatingRoHS*COMPLIANTQg (Max.) (nC) 39 Reduced Ciss, Coss, CrssQgs (nC) 10 Extremely High Frequency OperationQgd (nC) 19 Repetitive Avalanche Rated Comp
irf740s sihf740s.pdf
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IRF740S, SiHF740SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 400 Surface MountRDS(on) ()VGS = 10 V 0.55 Available in Tape and Reel Qg (Max.) (nC) 63 Dynamic dV/dt RatingQgs (nC) 9.0 Repetitive Avalanche Rated Fast SwitchingQgd (nC) 32 Ease of ParallelingConfiguration Sin
irf740apbf sihf740a.pdf
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IRF740A, SiHF740AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 400RequirementAvailableRDS(on) ()VGS = 10 V 0.55 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 36COMPLIANTRuggednessQgs (nC) 9.9 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 16and CurrentConfigur
irf740pbf sihf740.pdf
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IRF740, SiHF740Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.55RoHS* Fast SwitchingQg (Max.) (nC) 63 COMPLIANT Ease of ParallelingQgs (nC) 9.0Qgd (nC) 32 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDES
irf7406pbf.pdf
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PD - 95302IRF7406PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-ResistanceA1 8l P-Channel Mosfet S DVDSS = -30V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Dynamic dv/dt Rating4 5G DRDS(on) = 0.045l Fast Switchingl Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced proces
irf7402pbf.pdf
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PD - 95202IRF7402PbFHEXFET Power MOSFET Generation V TechnologyA Ultra Low On-ResistanceA1 8S D N-Channel MOSFETVDSS = 20V2 7S D Very Small SOIC Package Low Profile (
irf7401pbf-1.pdf
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IRF7401PbF-1HEXFET Power MOSFETVDS 20 VAA1 8S DRDS(on) max 0.022 2 7(@V = 4.5V) S DGSQg 48 nC3 6S DID 4 58.7 A G D(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally Fri
irf7404pbf.pdf
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PD - 95203IRF7404PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance A1 8S Dl P-Channel MosfetVDSS = -20V2 7S Dl Surface Mount3 6Sl Available in Tape & Reel D4 5l Dynamic dv/dt RatingG DRDS(on) = 0.040l Fast SwitchingTop Viewl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced proces
hirf740.pdf
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Spec. No. : MOS200512HI-SINCERITYIssued Date : 2005.09.01Revised Date : 2005.09.22MICROELECTRONICS CORP.Page No. : 1/4HIRF740 Series Pin AssignmentHIRF740 / HIRF740FTabN-Channel Power MOSFET (400V, 10A)3-Lead Plastic TO-220ABPackage Code: EPin 1: GatePin 2 & Tab: DrainDescriptionPin 3: SourceThis N-Channel MOSFETs provide the designer with the best combinationo
irf740.pdf
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IRF740 Rev.H Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency swi
irf7404tr.pdf
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IRF7404TRwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definitiona0.015 at VGS = - 4.5 V TrenchFET Power MOSFET- 13a 100 % Rg Tested0.026 at VGS = - 2.5 V - 20 20 nC- 10 Built in ESD Protection with Zener Diode0.065 at VGS = - 1.8 V - 8 Typical
irf740a.pdf
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isc N-Channel Mosfet Transistor IRF740AFEATURESDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitch mode power supplyUninterruptable power supplyHigh speed power switchingABSOLUTE MAXIMUM
irf740fi.pdf
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isc N-Channel MOSFET Transistor IRF740FIDESCRIPTIONDrain Current I = 5.5A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max)DS(on)Fast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltag
irf740.pdf
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isc N-Channel MOSFET Transistor IRF740FEATURESDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitch mode power supplyUninterruptable power supplyHigh speed power switchingABSOLUTE MAXIMUM
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .