SIA427ADJ
MOSFET. Datasheet pdf. Equivalent
Type Designator: SIA427ADJ
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 3.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 8
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 5
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.8
V
|Id|ⓘ - Maximum Drain Current: 12
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 33
nC
trⓘ - Rise Time: 20
nS
Cossⓘ -
Output Capacitance: 735
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016
Ohm
Package: SC-70-6L
SIA427ADJ
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIA427ADJ
Datasheet (PDF)
..1. Size:222K vishay
sia427adj.pdf 
New ProductSiA427ADJVishay SiliconixP-Channel 8 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) ID (A) Qg (Typ.) Thermally Enhanced PowerPAK SC-70 Package0.016 at VGS = - 4.5 V - 12a- Small Footprint Area0.0215 at VGS = - 2.5 V - 12a - Low On-Resistance 100 % Rg Tested- 8 0.026 at VGS = - 1.8 V - 12a 30 nC
8.1. Size:222K vishay
sia427dj.pdf
New ProductSiA427DJVishay SiliconixP-Channel 8 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) New Thermally Enhanced PowerPAKSC-70 Package0.016 at VGS = - 4.5 V - 12a- Small Footprint Area0.0215 at VGS = - 2.5 V - 12a- Low On-Resistance- 8 0.026 at VGS = - 1.8 V - 12a 30 nC 100 % Rg Tested Mate
9.1. Size:200K vishay
sia421dj.pdf
SiA421DJVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) New Thermally Enhanced PowerPAKSC-70 Package0.035 at VGS = - 10 V - 12a- 30 10 nC- Small Footprint Area0.056 at VGS = - 4.5 V - 12a- Low On-Resistance Material categorization:For definitions of compliance please
9.2. Size:200K vishay
sia429djt.pdf
New ProductSiA429DJTVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.0205 at VGS = - 4.5 V - 12a New Thermally Enhanced PowerPAK0.027 at VGS = - 2.5 V - 12aSC-70 Package- 20 24.5 nC0.036 at VGS = - 1.8 V - 12a - S
9.3. Size:109K vishay
sia425edj.pdf
SiA425EDJVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.060 at VGS = - 4.5 V - 4.5a New Thermally Enhanced PowerPAK0.065 at VGS = - 3.6 V - 4.5a- 20 4.9 nCSC-70 Package0.080 at VGS = - 2.5 V - 4.5a- Small Footpri
9.4. Size:154K vishay
sia429dj.pdf
New ProductSiA429DJTVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.0205 at VGS = - 4.5 V - 12a New Thermally Enhanced PowerPAK0.027 at VGS = - 2.5 V - 12aSC-70 Package- 20 24.5 nC0.036 at VGS = - 1.8 V - 12a - S
9.5. Size:217K vishay
sia426dj.pdf
New ProductSiA426DJVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.0236 at VGS = 10 V 4.5 New Thermally Enhanced PowerPAKRoHS0.0263 at VGS = 4.5 V 20 4.5 7.9 nCCOMPLIANTSC-70 Package0.0361 at VGS = 2.5 V - Small Footprint Area4.5- Low On-Resistanc
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