SIA432DJ Datasheet. Specs and Replacement

Type Designator: SIA432DJ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: SC-70-6L

SIA432DJ substitution

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SIA432DJ datasheet

 ..1. Size:120K  vishay
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SIA432DJ

New Product SiA432DJ Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)b, c Qg (Typ.) TrenchFET Power MOSFET New Thermally Enhanced PowerPAK 0.020 at VGS = 10 V RoHS 10.1 COMPLIANT 30 5.6 SC-70 Package 0.024 at VGS = 4.5 V 9.2 - Small Footprint Area APPLICATIONS Load Switch PowerPAK SC-70-... See More ⇒

 9.1. Size:216K  vishay
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SIA432DJ

New Product SiA431DJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (Typ.) New Thermally Enhanced PowerPAK 0.025 at VGS = - 4.5 V SC-70 Package - 12a - Small Footprint Area 0.031 at VGS = - 2.5 V - 12a - Low On-Resistance - 20 24 nC 0.041 at VGS = - 1.8 V - 12a 100 % Rg Tested 0... See More ⇒

 9.2. Size:253K  vishay
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SIA432DJ

SiA437DJ www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A) a Qg (Typ.) Thermally enhanced PowerPAK SC-70 package 0.0145 at VGS = -4.5 V -29.7 - Small footprint area 0.0205 at VGS = -2.5 V -25 -20 28 nC - Low On-Resistance 0.0330 at VGS = -1.8 V -19.7 0.0650 at VGS = -1.5 V -4 ... See More ⇒

 9.3. Size:192K  vishay
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SIA432DJ

New Product SiA438EDJ Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.046 at VGS = 4.5 V New Thermally Enhanced PowerPAK 6 20 3.5 nC SC-70 Package 0.063 at VGS = 2.5 V 6 - Small Footprint Area - Low On-Resistance Typical ESD Pr... See More ⇒

Detailed specifications: SIA425EDJ, SIA426DJ, SIA427ADJ, SIA427DJ, SIA429DJT, SIA430DJ, SIA430DJT, SIA431DJ, 5N60, SIA433EDJ, SIA436DJ, SIA437DJ, SIA438EDJ, SIA439EDJ, SIA440DJ, SIA441DJ, SIA443DJ

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.