All MOSFET. SIA438EDJ Datasheet

 

SIA438EDJ Datasheet and Replacement


   Type Designator: SIA438EDJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 63 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
   Package: SC-70-6L
 

 SIA438EDJ substitution

   - MOSFET ⓘ Cross-Reference Search

 

SIA438EDJ Datasheet (PDF)

 ..1. Size:194K  vishay
sia438edj.pdf pdf_icon

SIA438EDJ

New ProductSiA438EDJVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.046 at VGS = 4.5 V New Thermally Enhanced PowerPAK620 3.5 nCSC-70 Package0.063 at VGS = 2.5 V 6- Small Footprint Area- Low On-Resistance Typical ESD Pr

 6.1. Size:192K  vishay
sia438ed.pdf pdf_icon

SIA438EDJ

New ProductSiA438EDJVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.046 at VGS = 4.5 V New Thermally Enhanced PowerPAK620 3.5 nCSC-70 Package0.063 at VGS = 2.5 V 6- Small Footprint Area- Low On-Resistance Typical ESD Pr

 9.1. Size:216K  vishay
sia431dj.pdf pdf_icon

SIA438EDJ

New ProductSiA431DJVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) New Thermally Enhanced PowerPAK0.025 at VGS = - 4.5 V SC-70 Package- 12a- Small Footprint Area0.031 at VGS = - 2.5 V - 12a- Low On-Resistance- 20 24 nC0.041 at VGS = - 1.8 V - 12a 100 % Rg Tested0

 9.2. Size:253K  vishay
sia437dj.pdf pdf_icon

SIA438EDJ

SiA437DJwww.vishay.comVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () (Max.) ID (A) a Qg (Typ.) Thermally enhanced PowerPAK SC-70 package0.0145 at VGS = -4.5 V -29.7- Small footprint area0.0205 at VGS = -2.5 V -25-20 28 nC- Low On-Resistance0.0330 at VGS = -1.8 V -19.70.0650 at VGS = -1.5 V -4

Datasheet: SIA429DJT , SIA430DJ , SIA430DJT , SIA431DJ , SIA432DJ , SIA433EDJ , SIA436DJ , SIA437DJ , 75N75 , SIA439EDJ , SIA440DJ , SIA441DJ , SIA443DJ , SIA444DJT , SIA445EDJ , SIA446DJ , SIA447DJ .

History: APT3580BN | RSR030N06

Keywords - SIA438EDJ MOSFET datasheet

 SIA438EDJ cross reference
 SIA438EDJ equivalent finder
 SIA438EDJ lookup
 SIA438EDJ substitution
 SIA438EDJ replacement

 

 
Back to Top

 


 
.