SIA438EDJ
MOSFET. Datasheet pdf. Equivalent
Type Designator: SIA438EDJ
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4
V
|Id|ⓘ - Maximum Drain Current: 5.7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 7.5
nC
trⓘ - Rise Time: 12
nS
Cossⓘ -
Output Capacitance: 63
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.046
Ohm
Package: SC-70-6L
SIA438EDJ
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIA438EDJ
Datasheet (PDF)
..1. Size:194K vishay
sia438edj.pdf 
New ProductSiA438EDJVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.046 at VGS = 4.5 V New Thermally Enhanced PowerPAK620 3.5 nCSC-70 Package0.063 at VGS = 2.5 V 6- Small Footprint Area- Low On-Resistance Typical ESD Pr
6.1. Size:192K vishay
sia438ed.pdf
New ProductSiA438EDJVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.046 at VGS = 4.5 V New Thermally Enhanced PowerPAK620 3.5 nCSC-70 Package0.063 at VGS = 2.5 V 6- Small Footprint Area- Low On-Resistance Typical ESD Pr
9.1. Size:216K vishay
sia431dj.pdf
New ProductSiA431DJVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) New Thermally Enhanced PowerPAK0.025 at VGS = - 4.5 V SC-70 Package- 12a- Small Footprint Area0.031 at VGS = - 2.5 V - 12a- Low On-Resistance- 20 24 nC0.041 at VGS = - 1.8 V - 12a 100 % Rg Tested0
9.2. Size:253K vishay
sia437dj.pdf
SiA437DJwww.vishay.comVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () (Max.) ID (A) a Qg (Typ.) Thermally enhanced PowerPAK SC-70 package0.0145 at VGS = -4.5 V -29.7- Small footprint area0.0205 at VGS = -2.5 V -25-20 28 nC- Low On-Resistance0.0330 at VGS = -1.8 V -19.70.0650 at VGS = -1.5 V -4
9.3. Size:120K vishay
sia432dj.pdf
New ProductSiA432DJVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)b, c Qg (Typ.) TrenchFET Power MOSFET New Thermally Enhanced PowerPAK0.020 at VGS = 10 V RoHS10.1COMPLIANT30 5.6SC-70 Package0.024 at VGS = 4.5 V 9.2- Small Footprint AreaAPPLICATIONS Load SwitchPowerPAK SC-70-
9.4. Size:209K vishay
sia439edj.pdf
SiA439EDJwww.vishay.comVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) ID (A)a Qg (Typ.) Thermally Enhanced PowerPAK SC-70 Package0.0165 at VGS = - 4.5 V - 28- Small Footprint Area0.0180 at VGS = - 3.7 V - 27- Low On-Resistance- 20 26.7 nC0.0235 at VGS = - 2.5 V - 23 100 % Rg and UIS
9.5. Size:222K vishay
sia430dj.pdf
New ProductSiA430DJVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)b, c Qg (Typ.) TrenchFET Power MOSFET New Thermally Enhanced PowerPAK RoHS0.0135 at VGS = 10 V 12aCOMPLIANT20 5.3 nCSC-70 Package0.0185 at VGS = 4.5 V 10.8- Small Footprint AreaAPPLICATIONS Load SwitchPowerPAK
9.6. Size:214K vishay
sia436dj.pdf
New ProductSiA436DJVishay SiliconixN-Channel 8 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.0094 at VGS = 4.5 V 12 Thermally Enhanced PowerPAKSC-70 Package0.0105 at VGS = 2.5 V 12- Small Footprint Area0.0125 at VGS = 1.8 V 8 12 15
9.7. Size:223K vishay
sia433edj.pdf
New ProductSiA433EDJVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.018 at VGS = - 4.5 V - 12a TrenchFET Power MOSFET New Thermally Enhanced PowerPAK0.026 at VGS = - 2.5 V - 20- 12a 20 nCSC-70 Package0.065 at VGS = - 1.8 V - 4- Small Fo
9.8. Size:221K vishay
sia433ed.pdf
New ProductSiA433EDJVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.018 at VGS = - 4.5 V - 12a TrenchFET Power MOSFET New Thermally Enhanced PowerPAK0.026 at VGS = - 2.5 V - 20- 12a 20 nCSC-70 Package0.065 at VGS = - 1.8 V - 4- Small Fo
9.9. Size:227K vishay
sia430djt.pdf
SiA430DJTwww.vishay.comVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) b, c Qg (Typ.) Thermally enhanced PowerPAK SC-70 package0.0135 at VGS = 10 V 12 a20 5.3 nC - Small footprint area0.0185 at VGS = 4.5 V 10.8 - Ultra-thin 0.6 mm height 100 % Rg testedThin PowerPAK SC-70-6L Si
9.10. Size:1110K cn vbsemi
sia433edj.pdf
SIA433EDJwww.VBsemi.twP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) ID (A) Qg (Typ.) Thermally Enhanced DFN2X2Package0.030 at VGS = - 4.5 V -10a- 20 18 nC- Small Footprint Area0.040 at VGS = - 2.5 V -9a- Low On-ResistanceAPPLICATIONS Load Switch, PA Switch, and Battery Switch for PortableDevi
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