SIA444DJT Datasheet. Specs and Replacement
Type Designator: SIA444DJT 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ -
Output Capacitance: 125 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: SC-70-6L
- MOSFET ⓘ Cross-Reference Search
SIA444DJT datasheet
..1. Size:199K vishay
sia444djt.pdf 
New Product SiA444DJT Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.017 at VGS = 10 V 12 TrenchFET Power MOSFET 30 5 nC New Thermally Enhanced PowerPAK 0.022 at VGS = 4.5 V 12 SC-70 Package - Small Footprint Area Thin PowerPAK SC-70-6L-Single - ... See More ⇒
..2. Size:1426K cn vbsemi
sia444djt.pdf 
SiA444DJT www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 0.030 at VGS = 10 V 6 Low On-Resistance 30 4.2 nC 0.040 at VGS = 4.5 V 5 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS PowerPAK SC-70-6L... See More ⇒
9.2. Size:228K vishay
sia445edj.pdf 
New Product SiA445EDJ Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.0165 at VGS = - 4.5 V - 12a Thermally Enhanced PowerPAK 0.0185 at VGS = - 3.7 V - 20 - 12a 23 nC SC-70 Package 0.0300 at VGS = - 2.5 V - Small ... See More ⇒
9.3. Size:258K vishay
sia446dj.pdf 
SiA446DJ www.vishay.com Vishay Siliconix N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET technology optimizes balance VDS (V) RDS(on) ( ) MAX. ID (A) a Qg (TYP.) of RDS(on), Qg, Qsw and Qoss 0.177 at VGS = 10 V 7.7 100 % Rg and UIS tested 150 0.185 at VGS = 7.5 V 7.6 4.3 nC Material categorization 0.250 at VGS = 6 V 4 For definitions of compliance... See More ⇒
9.4. Size:332K vishay
sia445edjt.pdf 
SiA445EDJT www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) Qg (TYP.) Thermally enhanced PowerPAK SC-70 package 0.0167 at VGS = -4.5 V -12 a - Small footprint area -20 0.0185 at VGS = -3.7 V -12 a 22 nC - Low on-resistance 0.0310 at VGS = -2.5 V -12 a Ultra-thin 0.6 m... See More ⇒
9.5. Size:190K vishay
sia443dj.pdf 
New Product SiA443DJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) Qg (Typ) TrenchFET Power MOSFET 0.045 at VGS = - 4.5 V - 9a New Thermally Enhanced PowerPAK RoHS 0.063 at VGS = - 2.5 V - 20 - 9a 9 nC COMPLIANT SC-70 Package 0.088 at VGS = - 1.8 V - Small Footprint Area - 9a - Low On-Resis... See More ⇒
9.6. Size:230K vishay
sia440dj.pdf 
SiA440DJ Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A)a Qg (Typ.) 100 % Rg and UIS Tested 0.026 at VGS = 10 V Material categorization 12 For definitions of compliance please see 0.028 at VGS = 4.5 V 12 40 6.9 nC www.vishay.com/doc?99912 0.029 at VGS = 3.7 V 12 0.035 at VGS = ... See More ⇒
9.7. Size:204K vishay
sia441dj.pdf 
SiA441DJ Vishay Siliconix P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Power MOSFET 0.047 at VGS = - 10 V - 12a Thermally Enhanced PowerPAK - 40 11 nC 0.065 at VGS = - 4.5 V SC-70 Package - 12a - Small Footprint Area - Low On-Resistance PowerPAK SC-70... See More ⇒
9.8. Size:226K vishay
sia447dj.pdf 
New Product SiA447DJ Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A) Qg (Typ.) Thermally Enhanced PowerPAK SC-70 Package - Small Footprint Area 0.0135 at VGS = - 4.5 V - 12a - Low On-Resistance 0.0194 at VGS = - 2.5 V - 12a - 12 31 nC 100 % Rg Tested 0.0344 at VGS = - 1.8 V - 12a ... See More ⇒
9.9. Size:224K vishay
sia448dj.pdf 
New Product SiA448DJ Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) New Thermally Enhanced PowerPAK SC-70 Package 0.0150 at VGS = 4.5 V 12 - Small Footprint Area 0.0166 at VGS = 2.5 V 12 - Low On-Resistance 20 13 nC 0.0200 at VGS = 1.8 V 12 100 % Rg Tested 0.0324 ... See More ⇒
Detailed specifications: SIA433EDJ, SIA436DJ, SIA437DJ, SIA438EDJ, SIA439EDJ, SIA440DJ, SIA441DJ, SIA443DJ, IRFZ24N, SIA445EDJ, SIA446DJ, SIA447DJ, SIA448DJ, SIA449DJ, SIA450DJ, SIA453EDJ, SIA456DJ
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