SIA445EDJ MOSFET. Datasheet pdf. Equivalent
Type Designator: SIA445EDJ
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
|Id|ⓘ - Maximum Drain Current: 11.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 48 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 290 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0165 Ohm
Package: SC-70-6L
SIA445EDJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIA445EDJ Datasheet (PDF)
sia445edj.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
New ProductSiA445EDJVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.0165 at VGS = - 4.5 V - 12a Thermally Enhanced PowerPAK0.0185 at VGS = - 3.7 V - 20- 12a 23 nCSC-70 Package0.0300 at VGS = - 2.5 V - Small
sia445edjt.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SiA445EDJTwww.vishay.comVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Thermally enhanced PowerPAK SC-70 package0.0167 at VGS = -4.5 V -12 a- Small footprint area-20 0.0185 at VGS = -3.7 V -12 a 22 nC- Low on-resistance0.0310 at VGS = -2.5 V -12 a Ultra-thin 0.6 m
sia449dj.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
New ProductSiA449DJVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) ID (A) Qg (Typ.) Thermally Enhanced PowerPAK SC-70 Package- Small Footprint Area0.020 at VGS = - 10 V - 12a- Low On-Resistance- 30 0.024 at VGS = - 4.5 V - 12a 23.1 nC 100 % Rg Tested0.038 at VGS = - 2.5 V - 12a
sia444djt.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
New ProductSiA444DJTVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.017 at VGS = 10 V 12 TrenchFET Power MOSFET30 5 nC New Thermally Enhanced PowerPAK0.022 at VGS = 4.5 V 12SC-70 Package- Small Footprint AreaThin PowerPAK SC-70-6L-Single-
sia446dj.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SiA446DJwww.vishay.comVishay SiliconixN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY ThunderFET technology optimizes balanceVDS (V) RDS(on) () MAX. ID (A) a Qg (TYP.)of RDS(on), Qg, Qsw and Qoss0.177 at VGS = 10 V 7.7 100 % Rg and UIS tested150 0.185 at VGS = 7.5 V 7.6 4.3 nC Material categorization:0.250 at VGS = 6 V 4For definitions of compliance
sia443dj.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
New ProductSiA443DJVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ) TrenchFET Power MOSFET0.045 at VGS = - 4.5 V - 9a New Thermally Enhanced PowerPAK RoHS0.063 at VGS = - 2.5 V - 20- 9a 9 nC COMPLIANTSC-70 Package0.088 at VGS = - 1.8 V - Small Footprint Area- 9a- Low On-Resis
sia440dj.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SiA440DJVishay SiliconixN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.)ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.026 at VGS = 10 V Material categorization:12For definitions of compliance please see0.028 at VGS = 4.5 V 1240 6.9 nCwww.vishay.com/doc?999120.029 at VGS = 3.7 V 120.035 at VGS =
sia441dj.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SiA441DJVishay SiliconixP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.047 at VGS = - 10 V - 12a Thermally Enhanced PowerPAK- 40 11 nC0.065 at VGS = - 4.5 V SC-70 Package- 12a- Small Footprint Area- Low On-ResistancePowerPAK SC-70
sia447dj.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
New ProductSiA447DJVishay SiliconixP-Channel 12 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) ID (A) Qg (Typ.) Thermally Enhanced PowerPAK SC-70 Package- Small Footprint Area0.0135 at VGS = - 4.5 V - 12a- Low On-Resistance0.0194 at VGS = - 2.5 V - 12a- 12 31 nC 100 % Rg Tested0.0344 at VGS = - 1.8 V - 12a
sia448dj.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
New ProductSiA448DJVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) New Thermally Enhanced PowerPAKSC-70 Package0.0150 at VGS = 4.5 V 12- Small Footprint Area0.0166 at VGS = 2.5 V 12- Low On-Resistance20 13 nC0.0200 at VGS = 1.8 V 12 100 % Rg Tested0.0324
sia444djt.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SiA444DJTwww.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = 10 V 6 Low On-Resistance30 4.2 nC0.040 at VGS = 4.5 V 5 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSPowerPAK SC-70-6L
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
![SIA445EDJ](https://alltransistors.com/images/us.png)
![SIA445EDJ](https://alltransistors.com/images/es.png)
![SIA445EDJ](https://alltransistors.com/images/ru.png)
LIST
Last Update
MOSFET: MPVD5N50CCFD | MPVU5N50CCFD | MPVA7N65F | MPVD4N70F | MPVU4N70F | MPVA4N70F | MPVD4N65F | MPVU4N65F | MPVA4N65F | MPVD2N65BK | MPVU2N65BK | MPVA2N65BK | MPVP20N65F | MPVA20N65F | MPVA20N50F | MPVT20N50B