SIA449DJ Datasheet. Specs and Replacement

Type Designator: SIA449DJ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 10.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 168 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: SC-70-6L

SIA449DJ substitution

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SIA449DJ datasheet

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SIA449DJ

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SIA449DJ

New Product SiA444DJT Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.017 at VGS = 10 V 12 TrenchFET Power MOSFET 30 5 nC New Thermally Enhanced PowerPAK 0.022 at VGS = 4.5 V 12 SC-70 Package - Small Footprint Area Thin PowerPAK SC-70-6L-Single - ... See More ⇒

 9.2. Size:228K  vishay
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SIA449DJ

New Product SiA445EDJ Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.0165 at VGS = - 4.5 V - 12a Thermally Enhanced PowerPAK 0.0185 at VGS = - 3.7 V - 20 - 12a 23 nC SC-70 Package 0.0300 at VGS = - 2.5 V - Small ... See More ⇒

 9.3. Size:258K  vishay
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SIA449DJ

SiA446DJ www.vishay.com Vishay Siliconix N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET technology optimizes balance VDS (V) RDS(on) ( ) MAX. ID (A) a Qg (TYP.) of RDS(on), Qg, Qsw and Qoss 0.177 at VGS = 10 V 7.7 100 % Rg and UIS tested 150 0.185 at VGS = 7.5 V 7.6 4.3 nC Material categorization 0.250 at VGS = 6 V 4 For definitions of compliance... See More ⇒

Detailed specifications: SIA440DJ, SIA441DJ, SIA443DJ, SIA444DJT, SIA445EDJ, SIA446DJ, SIA447DJ, SIA448DJ, AO3400A, SIA450DJ, SIA453EDJ, SIA456DJ, SIA459EDJ, SIA461DJ, SIA462DJ, SIA466EDJ, SIA483DJ

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