SIA456DJ Datasheet. Specs and Replacement

Type Designator: SIA456DJ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 1.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 12 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.38 Ohm

Package: SC-70-6L

SIA456DJ substitution

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SIA456DJ datasheet

 ..1. Size:197K  vishay
 sia456dj.pdf pdf_icon

SIA456DJ

New Product SiA456DJ Vishay Siliconix N-Channel 200-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 1.38 at VGS = 4.5 V 2.6 New Thermally Enhanced PowerPAK RoHS COMPLIANT SC-70 Package 1.50 at VGS = 2.5 V 200 2.5 5 nC - Small Footprint Area 3.50 at VGS = 1.8 V 0.5 - Low On-Resistance ... See More ⇒

 9.1. Size:214K  vishay
 sia453edj.pdf pdf_icon

SIA456DJ

SiA453EDJ www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A)a Qg (Typ.) Thermally Enhanced PowerPAK SC-70 Package 0.0185 at VGS = - 10 V - 24 - Small Footprint Area 0.0235 at VGS = - 4.5 V - 21 - Low On-Resistance - 30 21 nC 0.0260 at VGS = - 3.7 V - 20 100 % Rg and UIS Tes... See More ⇒

 9.2. Size:214K  vishay
 sia459edj.pdf pdf_icon

SIA456DJ

SiA459EDJ www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A)a Qg (Typ.) Thermally Enhanced PowerPAK SC-70 Package 0.0350 at VGS = - 4.5 V - 9 - Small Footprint Area - 20 0.0395 at VGS = - 3.7 V - 9 10 nC - Low On-Resistance 0.0620 at VGS = - 2.5 V - 9 100 % Rg Tested T... See More ⇒

 9.3. Size:190K  vishay
 sia450dj.pdf pdf_icon

SIA456DJ

New Product SiA450DJ Vishay Siliconix N-Channel 240-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Power MOSFET 2.9 at VGS = 10 V 1.52 New Thermally Enhanced PowerPAK RoHS 2.95 at VGS = 4.5 V 240 1.5 2.54 nC COMPLIANT SC-70 Package 3.5 at VGS = 2.5 V 1.44 - Small Footprint Area - Low On-Resistance AP... See More ⇒

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Detailed specifications: SIA444DJT, SIA445EDJ, SIA446DJ, SIA447DJ, SIA448DJ, SIA449DJ, SIA450DJ, SIA453EDJ, IRF1405, SIA459EDJ, SIA461DJ, SIA462DJ, SIA466EDJ, SIA483DJ, SIA485DJ, SIA519EDJ, SIA527DJ

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