SIA907EDJT Datasheet and Replacement
Type Designator: SIA907EDJT
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.057 Ohm
Package: SC-70-6L
SIA907EDJT substitution
SIA907EDJT Datasheet (PDF)
sia907edjt.pdf
SiA907EDJTVishay SiliconixDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.057 at VGS = - 4.5 V - 4.5a- 20 4.9 nC New Thermally Enhanced Thin PowerPAK 0.095 at VGS = - 2.5 V - 4.5aSC-70 Package- Small Footprint Area- Low On-Res
sia906ed.pdf
New ProductSiA906EDJVishay SiliconixDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.046 at VGS = 4.5 V New Thermally Enhanced PowerPAK4.520 3.5 nCSC-70 Package0.063 at VGS = 2.5 V 4.5- Small Footprint Area- Low On-Resistance Typic
sia906edj.pdf
New ProductSiA906EDJVishay SiliconixDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.046 at VGS = 4.5 V New Thermally Enhanced PowerPAK4.520 3.5 nCSC-70 Package0.063 at VGS = 2.5 V 4.5- Small Footprint Area- Low On-Resistance Typic
Datasheet: SIA810DJ , SIA811ADJ , SIA811DJ , SIA813DJ , SIA814DJ , SIA817EDJ , SIA850DJ , SIA906EDJ , IRFZ44N , SIA910EDJ , SIA911ADJ , SIA913ADJ , SIA914ADJ , SIA915DJ , SIA920DJ , SIA921EDJ , SIA922EDJ .
History: BUZ73AL | MP4N150 | SSM3K329R | PMPB12UNEA
Keywords - SIA907EDJT MOSFET datasheet
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History: BUZ73AL | MP4N150 | SSM3K329R | PMPB12UNEA
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