SIA920DJ Datasheet. Specs and Replacement

Type Designator: SIA920DJ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 8 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 0.7 V

Qg ⓘ - Total Gate Charge: 4.8 nC

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 175 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm

Package: SC-70-6

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SIA920DJ datasheet

 ..1. Size:223K  vishay
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SIA920DJ

New Product SiA920DJ Vishay Siliconix Dual N-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.027 at VGS = 4.5 V 4.5 Thermally Enhanced PowerPAK 0.031 at VGS = 2.5 V 4.5 SC-70 Package 8 0.036 at Vgs = 1.8 V 4.5 4.8 nC - Small Footprint Area 0.... See More ⇒

 9.1. Size:277K  vishay
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SIA920DJ

SiA922EDJ www.vishay.com Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) Qg (TYP.) Thermally enhanced PowerPAK SC-70 package 0.064 at VGS = 4.5 V 4.5a - Small footprint area - Low on-resistance 0.072 at VGS = 3.0 V 4.5a 30 3.5 nC Typical ESD protection 1500 V (HBM) 0.080 at ... See More ⇒

 9.2. Size:209K  vishay
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SIA920DJ

SiA923EDJ Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.054 at VGS = - 4.5 V - 4.5a New Thermally Enhanced PowerPAK SC-70 0.070 at VGS = - 2.5 V - 4.5a Package - 20 9.5 nC 0.104 at VGS = - 1.8 V - 4.5a - Small Fo... See More ⇒

 9.3. Size:212K  vishay
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SIA920DJ

SiA921EDJ Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.059 at VGS = - 4.5 V - 4.5a - 20 4.9 nC New Thermally Enhanced PowerPAK SC-70 0.098 at VGS = - 2.5 V - 4.5a Package - Small Footprint Area - Low On-Resistance... See More ⇒

Detailed specifications: SIA850DJ, SIA906EDJ, SIA907EDJT, SIA910EDJ, SIA911ADJ, SIA913ADJ, SIA914ADJ, SIA915DJ, IRF540, SIA921EDJ, SIA922EDJ, SIA923EDJ, SIA929DJ, SIA931DJ, SIA975DJ, SIB404DK, SIB406EDK

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