SIA923EDJ Datasheet. Specs and Replacement

Type Designator: SIA923EDJ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V

Qg ⓘ - Total Gate Charge: 16.3 nC

tr ⓘ - Rise Time: 16 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.054 Ohm

Package: SC-70-6

SIA923EDJ substitution

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SIA923EDJ datasheet

 ..1. Size:209K  vishay
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SIA923EDJ

SiA923EDJ Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.054 at VGS = - 4.5 V - 4.5a New Thermally Enhanced PowerPAK SC-70 0.070 at VGS = - 2.5 V - 4.5a Package - 20 9.5 nC 0.104 at VGS = - 1.8 V - 4.5a - Small Fo... See More ⇒

 8.1. Size:353K  vishay
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SIA923EDJ

SiA923AEDJ www.vishay.com Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) Qg (TYP.) Thermally Enhanced PowerPAK SC-70 Package 0.054 at VGS = -4.5 V -4.5 a - Small Footprint Area 0.070 at VGS = -2.5 V -4.5 a - Low On-Resistance -20 9.5 nC 0.104 at VGS = -1.8 V -4.5 a Typical ESD Prot... See More ⇒

 9.1. Size:277K  vishay
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SIA923EDJ

SiA922EDJ www.vishay.com Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) Qg (TYP.) Thermally enhanced PowerPAK SC-70 package 0.064 at VGS = 4.5 V 4.5a - Small footprint area - Low on-resistance 0.072 at VGS = 3.0 V 4.5a 30 3.5 nC Typical ESD protection 1500 V (HBM) 0.080 at ... See More ⇒

 9.2. Size:212K  vishay
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SIA923EDJ

SiA921EDJ Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.059 at VGS = - 4.5 V - 4.5a - 20 4.9 nC New Thermally Enhanced PowerPAK SC-70 0.098 at VGS = - 2.5 V - 4.5a Package - Small Footprint Area - Low On-Resistance... See More ⇒

Detailed specifications: SIA910EDJ, SIA911ADJ, SIA913ADJ, SIA914ADJ, SIA915DJ, SIA920DJ, SIA921EDJ, SIA922EDJ, IRFZ44, SIA929DJ, SIA931DJ, SIA975DJ, SIB404DK, SIB406EDK, SIB408DK, SIB410DK, SIB411DK

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