All MOSFET. SIB415DK Datasheet

 

SIB415DK MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIB415DK
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 4.17 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.7 nC
   trⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.087 Ohm
   Package: SC-75-6L

 SIB415DK Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIB415DK Datasheet (PDF)

 ..1. Size:223K  vishay
 sib415dk.pdf

SIB415DK SIB415DK

New ProductSiB415DKVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a, f Qg (Typ.) TrenchFET Power MOSFET0.087 at VGS = - 10 V - 9 New Thermally Enhanced PowerPAK RoHS- 30 3.5 nC0.158 at VGS = - 4.5 V - 7.2 COMPLIANTSC-75 Package- Small Footprint AreaAPPLICATIONSPowerPAK SC-75-6L-Single

 9.1. Size:223K  vishay
 sib412dk.pdf

SIB415DK SIB415DK

New ProductSiB412DKVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.034 at VGS = 4.5 V 9a New Thermally Enhanced PowerPAKRoHS0.040 at VGS = 2.5 V 209a 6.14 nCCOMPLIANTSC-75 Package0.054 at VGS = 1.8 V - Small Footprint Area9a- Low On-ResistanceA

 9.2. Size:224K  vishay
 sib414dk.pdf

SIB415DK SIB415DK

New ProductSiB414DKVishay SiliconixN-Channel 1.2-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.026 at VGS = 4.5 V 9a New Thermally Enhanced PowerPAKRoHS0.030 at VGS = 2.5 V COMPLIANT9aSC-75 Package- Small Footprint Area0.037 at VGS = 1.8 V 89a 8.6 nC- Low On-Resistance0.

 9.3. Size:223K  vishay
 sib413dk.pdf

SIB415DK SIB415DK

New ProductSiB413DKVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a, f Qg (Typ.) TrenchFET Power MOSFET0.075 at VGS = - 4.5 V - 9 New Thermally Enhanced PowerPAK RoHS- 20 4.56 nC0.143 at VGS = - 2.5 V - 7.8 COMPLIANTSC-75 Package- Small Footprint AreaAPPLICATIONS Load Switch, PA Switc

 9.4. Size:218K  vishay
 sib417aedk.pdf

SIB415DK SIB415DK

SiB417AEDKVishay SiliconixP-Channel 1.2 V (G-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)g Qg (Typ.) Thermally Enhanced PowerPAK0.032 at VGS = - 4.5 V - 9a SC-75 Package0.045 at VGS = - 2.5 V - Small Footprint Area- 9a- Low On-Resistance- 8 0.063 at VGS = - 1.8 V - 9a 11.3 nC 100 % Rg Tested0.120 at VG

 9.5. Size:209K  vishay
 sib417edk.pdf

SIB415DK SIB415DK

SiB417EDKVishay SiliconixP-Channel 1.2-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.058 at VGS = - 4.5 V - 9.0a TrenchFET Power MOSFET0.080 at VGS = - 2.5 V - 9.0a New Thermally Enhanced PowerPAKSC-75 Package- 8 0.100 at VGS = - 1.8 V - 4.07.3 nC- Small Footprint Are

 9.6. Size:188K  vishay
 sib410dk.pdf

SIB415DK SIB415DK

New ProductSiB410DKVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.042 at VGS = 4.5 V TrenchFET Power MOSFET9 100 % Rg Tested0.046 at VGS = 2.5 V 30 9 5.7 nC Compliant to RoHS Directive 2002/95/EC0.052 at VGS = 1.8 V 9APPLICATIONSP

 9.7. Size:227K  vishay
 sib417dk.pdf

SIB415DK SIB415DK

New ProductSiB417DKVishay SiliconixP-Channel 1.2-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.052 at VGS = - 4.5 V - 9a New Thermally Enhanced PowerPAKRoHS0.070 at VGS = - 2.5 V COMPLIANT- 9aSC-75 Package- Small Footprint Area- 8 0.093 at VGS = - 1.8 V - 4.07.78 nC- Low On-

 9.8. Size:207K  vishay
 sib417ed.pdf

SIB415DK SIB415DK

SiB417EDKVishay SiliconixP-Channel 1.2-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.058 at VGS = - 4.5 V - 9.0a TrenchFET Power MOSFET0.080 at VGS = - 2.5 V - 9.0a New Thermally Enhanced PowerPAKSC-75 Package- 8 0.100 at VGS = - 1.8 V - 4.07.3 nC- Small Footprint Are

 9.9. Size:209K  vishay
 sib411dk.pdf

SIB415DK SIB415DK

SiB411DKVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.066 at VGS = - 4.5 V - 9a New Thermally Enhanced PowerPAK RoHS0.094 at VGS = - 2.5 V - 20- 9a 6 nC COMPLIANTSC-75 Package0.130 at VGS = - 1.8 V - Small Footprint Area- 9a- Low On-ResistanceAPPLI

 9.10. Size:192K  vishay
 sib419dk.pdf

SIB415DK SIB415DK

New ProductSiB419DKVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)f, g Qg (Typ.) TrenchFET Power MOSFET0.060 at VGS = - 4.5 V - 9 New Thermally Enhanced PowerPAK RoHS0.082 at VGS = - 2.5 V - 9 7.15 nC- 12 COMPLIANTSC-75 Package0.114 at VGS = - 1.8 V - 2 - Small Footprint AreaAPPLICATIONS

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IRFPG50

 

 
Back to Top