All MOSFET. SIB417AEDK Datasheet

 

SIB417AEDK Datasheet and Replacement


   Type Designator: SIB417AEDK
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 8 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 7.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 415 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: SC-75-6L
 

 SIB417AEDK substitution

   - MOSFET ⓘ Cross-Reference Search

 

SIB417AEDK Datasheet (PDF)

 ..1. Size:218K  vishay
sib417aedk.pdf pdf_icon

SIB417AEDK

SiB417AEDKVishay SiliconixP-Channel 1.2 V (G-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)g Qg (Typ.) Thermally Enhanced PowerPAK0.032 at VGS = - 4.5 V - 9a SC-75 Package0.045 at VGS = - 2.5 V - Small Footprint Area- 9a- Low On-Resistance- 8 0.063 at VGS = - 1.8 V - 9a 11.3 nC 100 % Rg Tested0.120 at VG

 8.1. Size:209K  vishay
sib417edk.pdf pdf_icon

SIB417AEDK

SiB417EDKVishay SiliconixP-Channel 1.2-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.058 at VGS = - 4.5 V - 9.0a TrenchFET Power MOSFET0.080 at VGS = - 2.5 V - 9.0a New Thermally Enhanced PowerPAKSC-75 Package- 8 0.100 at VGS = - 1.8 V - 4.07.3 nC- Small Footprint Are

 8.2. Size:227K  vishay
sib417dk.pdf pdf_icon

SIB417AEDK

New ProductSiB417DKVishay SiliconixP-Channel 1.2-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.052 at VGS = - 4.5 V - 9a New Thermally Enhanced PowerPAKRoHS0.070 at VGS = - 2.5 V COMPLIANT- 9aSC-75 Package- Small Footprint Area- 8 0.093 at VGS = - 1.8 V - 4.07.78 nC- Low On-

 8.3. Size:207K  vishay
sib417ed.pdf pdf_icon

SIB417AEDK

SiB417EDKVishay SiliconixP-Channel 1.2-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.058 at VGS = - 4.5 V - 9.0a TrenchFET Power MOSFET0.080 at VGS = - 2.5 V - 9.0a New Thermally Enhanced PowerPAKSC-75 Package- 8 0.100 at VGS = - 1.8 V - 4.07.3 nC- Small Footprint Are

Datasheet: SIB406EDK , SIB408DK , SIB410DK , SIB411DK , SIB412DK , SIB413DK , SIB414DK , SIB415DK , IRF9540 , SIB417DK , SIB417EDK , SIB419DK , SIB422EDK , SIB433EDK , SIB437EDKT , SIB441EDK , SIB452DK .

History: SI4622DY | VBZL80N03

Keywords - SIB417AEDK MOSFET datasheet

 SIB417AEDK cross reference
 SIB417AEDK equivalent finder
 SIB417AEDK lookup
 SIB417AEDK substitution
 SIB417AEDK replacement

 

 
Back to Top

 


 
.