SIB914DK Datasheet. Specs and Replacement
Type Designator: SIB914DK 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 8 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 68 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.113 Ohm
Package: SC-75-6L
SIB914DK substitution
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SIB914DK datasheet
sib914dk.pdf
New Product SiB914DK Vishay Siliconix Dual N-Channel 1.2-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)g Qg (Typ.) TrenchFET Power MOSFET 0.113 at VGS = 4.5 V 1.5a New Thermally Enhanced PowerPAK RoHS 0.138 at VGS = 2.5 V SC-75 Package COMPLIANT 1.5a - Small Footprint Area 0.190 at VGS = 1.8 V 8 1.5a 1.5 nC - Low On-Res... See More ⇒
sib912dk.pdf
New Product SiB912DK Vishay Siliconix Dual N-Channel 20-V MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a, g Qg (Typ.) TrenchFET Power MOSFET 0.216 at VGS = 4.5 V 1.5 New Thermally Enhanced PowerPAK RoHS 0.268 at VGS = 2.5 V 20 1.5 1.2 nC SC-75 Package COMPLIANT - Small Footprint Area 0.375 at VGS = 1.8 V 1.0 - Low On-Resistance ... See More ⇒
sib911dk.pdf
New Product SiB911DK Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Power MOSFET 0.295 at VGS = - 4.5 V - 2.6 New Thermally Enhanced PowerPAK RoHS 0.420 at VGS = - 2.5 V - 20 1.6 nC - 2.2 COMPLIANT SC-75 Package 0.560 at VGS = - 1.8 V - Small Footprint Area - 1.9 APP... See More ⇒
Detailed specifications: SIB452DK, SIB455EDK, SIB456DK, SIB457EDK, SIB488DK, SIB800EDK, SIB911DK, SIB912DK, IRFP260, SIE726DF, SIE800DF, SIE802DF, SIE804DF, SIE806DF, SIE808DF, SIE810DF, SIE812DF
Keywords - SIB914DK MOSFET specs
SIB914DK cross reference
SIB914DK equivalent finder
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SIB914DK replacement
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