SIB914DK MOSFET. Datasheet pdf. Equivalent
Type Designator: SIB914DK
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 8 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.8 V
|Id|ⓘ - Maximum Drain Current: 1.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 1.7 nC
trⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 68 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.113 Ohm
Package: SC-75-6L
SIB914DK Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIB914DK Datasheet (PDF)
sib914dk.pdf
New ProductSiB914DKVishay SiliconixDual N-Channel 1.2-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)g Qg (Typ.) TrenchFET Power MOSFET0.113 at VGS = 4.5 V 1.5a New Thermally Enhanced PowerPAKRoHS0.138 at VGS = 2.5 V SC-75 Package COMPLIANT1.5a- Small Footprint Area0.190 at VGS = 1.8 V 81.5a 1.5 nC- Low On-Res
sib912dk.pdf
New ProductSiB912DKVishay SiliconixDual N-Channel 20-V MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a, g Qg (Typ.) TrenchFET Power MOSFET0.216 at VGS = 4.5 V 1.5 New Thermally Enhanced PowerPAKRoHS0.268 at VGS = 2.5 V 20 1.5 1.2 nC SC-75 Package COMPLIANT- Small Footprint Area0.375 at VGS = 1.8 V 1.0- Low On-Resistance
sib911dk.pdf
New ProductSiB911DKVishay SiliconixDual P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.295 at VGS = - 4.5 V - 2.6 New Thermally Enhanced PowerPAK RoHS0.420 at VGS = - 2.5 V - 20 1.6 nC- 2.2 COMPLIANTSC-75 Package0.560 at VGS = - 1.8 V - Small Footprint Area- 1.9APP
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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