SIHD12N50E Datasheet. Specs and Replacement

Type Designator: SIHD12N50E  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 114 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 52 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: TO-252

SIHD12N50E substitution

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SIHD12N50E datasheet

 ..1. Size:185K  vishay
 sihd12n50e.pdf pdf_icon

SIHD12N50E

SiHD12N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.380 Reduced switching and conduction losses Qg max. (nC) 50 Low gate charge (Qg) Qgs (nC) 6 Avalanche energy rated (UIS) Qgd (nC) 10 Materi... See More ⇒

 ..2. Size:262K  inchange semiconductor
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SIHD12N50E

Isc N-Channel MOSFET Transistor SiHD12N50E FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol... See More ⇒

Detailed specifications: SIHB23N60E, SIHB24N65E, SIHB28N60EF, SIHB30N60E, SIHB33N60E, SIHB33N60EF, SIHB6N65E, SIHB8N50D, MMIS60R580P, SIHD3N50D, SIHD3N50DA, SIHD5N50D, SIHD6N62E, SIHD6N65E, SIHD7N60E, SIHF10N40D, SIHF12N50C

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