All MOSFET. IRF740SPBF Datasheet

 

IRF740SPBF Datasheet and Replacement


   Type Designator: IRF740SPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 63 nC
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: TO-263
 

 IRF740SPBF substitution

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IRF740SPBF Datasheet (PDF)

 ..1. Size:951K  international rectifier
 irf740spbf.pdf pdf_icon

IRF740SPBF

PD - 95204IRF740SPbF Lead-Free4/29/04Document Number: 91055 www.vishay.com1IRF740SPbFDocument Number: 91055 www.vishay.com2IRF740SPbFDocument Number: 91055 www.vishay.com3IRF740SPbFDocument Number: 91055 www.vishay.com4IRF740SPbFDocument Number: 91055 www.vishay.com5IRF740SPbFDocument Number: 91055 www.vishay.com6IRF740SPbFD2Pak Package Outli

 ..2. Size:195K  vishay
 irf740spbf sihf740s.pdf pdf_icon

IRF740SPBF

IRF740S, SiHF740SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 400 Surface MountRDS(on) ()VGS = 10 V 0.55 Available in Tape and Reel Qg (Max.) (nC) 63 Dynamic dV/dt RatingQgs (nC) 9.0 Repetitive Avalanche Rated Fast SwitchingQgd (nC) 32 Ease of ParallelingConfiguration Sin

 7.1. Size:171K  international rectifier
 irf740s.pdf pdf_icon

IRF740SPBF

 7.2. Size:93K  st
 irf740s.pdf pdf_icon

IRF740SPBF

IRF740S N - CHANNEL 400V - 0.48 - 10A- D2PAKPowerMESH MOSFETTYPE VDSS RDS(on) IDIRF740S 400 V

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History: MDF5N50BTH | IRC533

Keywords - IRF740SPBF MOSFET datasheet

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