IRF7460 Datasheet and Replacement

PD - 95308IRF7460PbFSMPS MOSFETHEXFET Power MOSFETApplicationsl High Frequency Isolated DC-DCVDSS RDS(on) max(mW) ID Converters with Synchronous Rectification for Telecom and Industrial Use 20V 10@VGS = 10V 12Al High Frequency Buck Converters forComputer Processor Powerl Lead-FreeAA1 8S DBenefits2 7S Dl Ultra-Low Gate Impedance3 6S Dl Very Low RDS(o

PD - 93886DIRF7460SMPS MOSFETHEXFET Power MOSFETApplications)VDSS RDS(on) max(m) ID))) High Frequency Isolated DC-DC20V 10@VGS = 10V 12A Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters forComputer Processor PowerAA1 8S DBenefits2 7S D Ultra-Low Gate Impedance3 6S D Very L

PD - 95275IRF7467PbFSMPS MOSFETApplicationsHEXFET Power MOSFETl High Frequency DC-DC IsolatedVDSS RDS(on) max IDConverters with Synchronous Rectification 30V 12m 11Afor Telecom and Industrial usel High Frequency Buck Converters forComputer Processor Powerl Lead-FreeAA1 8S DBenefits2 7S Dl Ultra-Low Gate Impedance3 6l Very Low RDS(on) at 4.5V VGS

PD- 93884CIRF7466SMPS MOSFETHEXFET Power MOSFETApplications)VDSS RDS(on) max(m) ID))) High Frequency Isolated DC-DC30V 12.5@VGS = 10V 11A Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters forAComputer Processor PowerA1 8S DBenefits2 7S D Ultra-Low Gate Impedance3 6S D Very

PD- 93895IRF7464SMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters200V 0.73 1.2ABenefits Low Gate to Drain Charge to ReduceAA1 8S DSwitching Losses2 7 Fully Characterized Capacitance IncludingS DEffective COSS to Simplify Design, (See3 6S DApp. Note AN1001)4 5G D Fully Characterized Avalanche Voltage

PD - 95344IRF7468PbFSMPS MOSFETHEXFET Power MOSFETApplicationsl High Frequency Isolated DC-DCVDSS RDS(on) max(mW) ID Converters with Synchronous Rectification40V 15.5@VGS = 10V 9.4A for Telecom and Industrial Usel High Frequency Buck Converters forComputer Processor Powerl Lead-FreeAA1 8S D2 7Benefits S D3 6S Dl Ultra-Low Gate Impedance4 5G Dl V

IRF7469PbF-1HEXFET Power MOSFETVDS 40 VRDS(on) max AA171 8S D(@V = 10V)GSm2 7RDS(on) max S D21(@V = 4.5V)GS 3 6S DQg (typical) 15 nC4 5G DID 9.0 ASO-8(@T = 25C)ATop ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS C

PD-95274IRF7465PbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters150V 0.28W@VGS = 10V 1.9Al Lead-FreeBenefitsAl Low Gate to Drain Charge to ReduceA1 8S DSwitching Losses2 7S Dl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design (See 3 6S DApp. Note AN1001)45G Dl Fully Chara

PD - 95248SMPS MOSFETIRF7463PbFApplicationsHEXFET Power MOSFETl High Frequency DC-DC IsolatedConverters with Synchronous Rectification VDSS RDS(on) max IDfor Telecom and Industrial use 30V 8m 14Al High Frequency Buck Converters forComputer Processor Powerl Lead-FreeBenefitsAA1 8S Dl Ultra-Low Gate Impedance2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S

PD- 95286IRF7469PbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max(mW) IDl High Frequency Isolated DC-DC40V 17@VGS = 10V 9.0A Converters with Synchronous Rectification for Telecom and Industrial Usel High Frequency Buck Converters forAComputer Processor PowerA1 8S Dl Lead-Free2 7S D3 6S DBenefits4 5G Dl Ultra-Low Gate Impedancel Ver

PD-93896IRF7465SMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters150V 0.28@VGS = 10V 1.9ABenefitsA Low Gate to Drain Charge to ReduceA1 8S DSwitching Losses2 7S D Fully Characterized Capacitance IncludingEffective COSS to Simplify Design (See 3 6S DApp. Note AN1001)45G D Fully Cha

PD- 95273IRF7464PbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters200V 0.73 1.2Al Lead-FreeBenefitsl Low Gate to Drain Charge to ReduceAA1 8S DSwitching Losses2 7l Fully Characterized CapacitanceS DIncluding Effective COSS to Simplify3 6S DDesign, (See App. Note AN1001)4 5G Dl Fully Characteriz

PD - 93914DIRF7468SMPS MOSFETHEXFET Power MOSFETApplications)VDSS RDS(on) max(m) ID))) High Frequency Isolated DC-DC40V 15.5@VGS = 10V 9.4A Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters forComputer Processor PowerAA1 8S DBenefits2 7S D Ultra-Low Gate Impedance3 6S D Ver

PD- 93951AIRF7469SMPS MOSFETHEXFET Power MOSFETApplications)VDSS RDS(on) max(m) ID))) High Frequency Isolated DC-DC40V 17@VGS = 10V 9.0A Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters forAComputer Processor PowerA1 8S DBenefits2 7S D Ultra-Low Gate Impedance 3 6S D Very Lo

PD- 95730IRF7466PbFSMPS MOSFETApplicationsHEXFET Power MOSFETl High Frequency Isolated DC-DC Converters with Synchronous RectificationVDSS RDS(on) max(mW) ID for Telecom and Industrial Use30V 12.5@VGS = 10V 11Al High Frequency Buck Converters forComputer Processor Powerl Lead-FreeAA1 8S DBenefits2 7S Dl Ultra-Low Gate Impedance3 6S Dl Very Low RDS

PD- 93843AIRF7463SMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High Frequency DC-DC Converters 30V 0.008 14Awith Synchronous RectificationBenefits Ultra-Low RDS(on) at 4.5V VGS Low Charge and Low Gate Impedance toReduce Switching Losses Fully Characterized Avalanche Voltageand CurrentSO-8Absolute Maximum RatingsParameter Max. UnitsID @ TA

PD - 93883BIRF7467SMPS MOSFETApplicationsHEXFET Power MOSFET High Frequency DC-DC IsolatedVDSS RDS(on) max IDConverters with Synchronous Rectification 30V 12m 11Afor Telecom and Industrial use High Frequency Buck Converters forComputer Processor PowerBenefitsAA Ultra-Low Gate Impedance 1 8S D Very Low RDS(on) at 4.5V VGS2 7S D Fully Characterized Ava

IRF7468TRwww.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.012 at VGS = 10 V TrenchFET Power MOSFET1240 15 nC 100 % Rg Tested0.012 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/ECAPPLICATIONS Synchronous Rectifi

IRF7463TRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.008 at VGS = 10 V 1330 6.1 nC Optimized for High-Side Synchronous0.011 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

IRF7469TRwww.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.012 at VGS = 10 V TrenchFET Power MOSFET1240 15 nC 100 % Rg Tested0.012 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/ECAPPLICATIONS Synchronous Rectifi

IRF7467TRwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchS