All MOSFET. IRF7478PBF-1 Datasheet

 

IRF7478PBF-1 Datasheet and Replacement


   Type Designator: IRF7478PBF-1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.6 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: SO-8
 

 IRF7478PBF-1 substitution

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IRF7478PBF-1 Datasheet (PDF)

 ..1. Size:197K  international rectifier
irf7478pbf-1.pdf pdf_icon

IRF7478PBF-1

IRF7478PbF-1SMPS MOSFETHEXFET Power MOSFETAVDS 60 VA1 8S DRDS(on) max 262 7(@V = 10V) S DGSmRDS(on) max 3 6S D30(@V = 4.5V)GS45G DQg (typical) 21 nCID SO-87.0 A Top View(@T = 25C)AApplicationsl High frequency DC-DC convertersFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible wit

 4.1. Size:128K  international rectifier
irf7478pbf.pdf pdf_icon

IRF7478PBF-1

PD- 95280IRF7478PbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max (mW) IDl High frequency DC-DC converters60V 26@VGS = 10V 4.2Al Lead-Free30@VGS = 4.5V 3.5ABenefitsAA1 8S Dl Low Gate to Drain Charge to Reduce2 7Switching LossesS Dl Fully Characterized Capacitance Including3 6S DEffective COSS to Simplify Design, (See4 5G DApp. Note

 7.1. Size:214K  international rectifier
irf7478qpbf.pdf pdf_icon

IRF7478PBF-1

PD- 96128SMPS MOSFETIRF7478QPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl N Channel MOSFET60V 26@VGS = 10V 4.2Al Surface Mount30@VGS = 4.5V 3.5Al Available in Tape & Reell 150C Operating Temperaturel Automotive [Q101] QualifiedAAl Lead-Free1 8S DDescription 2 7S DSpecifically designed for Autom

 7.2. Size:209K  international rectifier
irf7478.pdf pdf_icon

IRF7478PBF-1

PD- 94055AIRF7478SMPS MOSFETHEXFET Power MOSFETApplications)VDSS RDS(on) max (m) ID))) High frequency DC-DC converters60V 26@VGS = 10V 4.2A30@VGS = 4.5V 3.5ABenefitsAA1 8S D Low Gate to Drain Charge to Reduce2 7Switching LossesS D Fully Characterized Capacitance Including3 6S DEffective COSS to Simplify Design, (See4 5G DA

Datasheet: IRF7471 , IRF7473PBF , IRF7473PBF-1 , IRF7475PBF , IRF7476PBF , IRF7477 , IRF7477PBF , IRF7478PBF , AON7403 , IRF7478QPBF , IRF7480M , IRF7483M , IRF7484PBF , IRF7484Q , IRF7490PBF , IRF7492PBF , IRF7493PBF .

History: ME4947 | RQJ0305EQDQA | SM2300NSAN | AON6266 | KRLML6401 | P057AAT | IXTH75N10L2

Keywords - IRF7478PBF-1 MOSFET datasheet

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 IRF7478PBF-1 replacement

 

 
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