IRF7484Q Datasheet. Specs and Replacement

Type Designator: IRF7484Q  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 660 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: SO-8

IRF7484Q substitution

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IRF7484Q datasheet

 ..1. Size:248K  international rectifier
irf7484q.pdf pdf_icon

IRF7484Q

PD - 94803A AUTOMOTIVE MOSFET IRF7484Q Typical Applications Relay replacement HEXFET Power MOSFET Anti-lock Braking System Air Bag VDSS RDS(on) max (mW) ID Benefits 40V 10@VGS = 7.0V 14A Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax A A 1 8 S D 2 7 S D Description 3 6 S D Specifically designed for Aut... See More ⇒

 0.1. Size:224K  international rectifier
auirf7484q.pdf pdf_icon

IRF7484Q

AUTOMOTIVE GRADE PD - 97757 AUIRF7484Q Features HEXFET Power MOSFET l Advanced Planar Technology A A 1 8 l Low On-Resistance S D V(BR)DSS 40V 2 7 S D l 150 C Operating Temperature 3 6 S D RDS(on) max. 10m l Fast Switching 4 5 G D l Fully Avalanche Rated ID 14A Top View l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* ... See More ⇒

 0.2. Size:416K  infineon
auirf7484q.pdf pdf_icon

IRF7484Q

AUTOMOTIVE GRADE AUIRF7484Q HEXFET Power MOSFET Features Advanced Planar Technology A VDSS A 1 8 Low On-Resistance 40V S D 2 7 S D 150 C Operating Temperature RDS(on) max. 3 6 S D Fast Switching 10m 4 5 G D Fully Avalanche Rated ID Top View Repetitive Avalanche Allowed up to Tjmax 14A Lead-Free, RoHS Compliant Auto... See More ⇒

 7.1. Size:231K  international rectifier
irf7484pbf.pdf pdf_icon

IRF7484Q

PD - 95281A IRF7484PbF Typical Applications HEXFET Power MOSFET Industrial Motor Drive VDSS RDS(on) max (mW) ID 40V 10@VGS = 7.0V 14A Benefits l Advanced Process Technology l Ultra Low On-Resistance l Fast Switching l Repetitive Avalanche Allowed up to Tjmax. A A 1 8 l Lead-Free S D 2 7 S D Description 3 6 S D This Stripe Planar design of HEXFET Power 4 5 MOSFETs ... See More ⇒

Detailed specifications: IRF7477, IRF7477PBF, IRF7478PBF, IRF7478PBF-1, IRF7478QPBF, IRF7480M, IRF7483M, IRF7484PBF, RU7088R, IRF7490PBF, IRF7492PBF, IRF7493PBF, IRF7493PBF-1, IRF7494PBF, IRF7495PBF, IRF7509PBF-1, IRF7521D1PBF

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.