IRF7523D1PBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF7523D1PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 2.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7.8 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 80 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: MICRO-8
IRF7523D1PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF7523D1PBF Datasheet (PDF)
irf7523d1pbf.pdf
PD- 95434IRF7523D1PbFFETKY MOSFET / Schottky Diodel Co-packaged HEXFET Power MOSFETand Schottky Diode1 8A Kl N-Channel HEXFET VDSS = 30V2 7l Low VF Schottky Rectifier A Kl Generation 5 Technology3 6 RDS(on) = 0.11S DTMl Micro8 Footprint45G Dl Lead-FreeSchottky Vf = 0.39VTop ViewDescriptionThe FETKYTM family of co-packaged HEXFETs and Schottky d
irf7523d1.pdf
PD- 91647CIRF7523D1 FETKY MOSFET / Schottky Diode Co-packaged HEXFET Power MOSFET1 8A Kand Schottky DiodeVDSS = 30V2 7 N-Channel HEXFETA K Low VF Schottky Rectifier3 6 RDS(on) = 0.11S D Generation 5 Technology45TMG D Micro8 FootprintSchottky Vf = 0.39VTop ViewDescriptionThe FETKYTM family of co-packaged HEXFETs and Schott
irf7524d1gpbf.pdf
PD -96176IRF7524D1GPbFFETKYTM MOSFET & Schottky Diodel Co-packaged HEXFET Power1 8MOSFET and Schottky Diode KAVDSS = -20Vl P-Channel HEXFET2 7A Kl Low VF Schottky Rectifier3 6S Dl Generation 5 Technology RDS(on) = 0.27TM45l Micro8 FootprintG Dl Lead-FreeSchottky Vf = 0.39Vl Halogen-Free Top ViewDescriptionThe FETKYTM family of co-packaged H
irf7526d1pbf.pdf
PD -95437IRF7526D1PbFFETKY TM MOSFET & Schottky Diodel Co-packaged HEXFET PowerMOSFET and Schottky Diode1 8A Kl P-Channel HEXFETVDSS = -30V2 7l Low VF Schottky RectifierA Kl Generation 5 Technology3 6S D RDS(on) = 0.20TMl Micro8 Footprint45G Dl Lead-FreeSchottky Vf = 0.39VDescription Top ViewThe FETKYTM family of co-packaged HEXFETs and Schot
irf7526d1.pdf
PD -91649CIRF7526D1FETKY TM MOSFET & Schottky Diode Co-packaged HEXFET Power1 8A KMOSFET and Schottky DiodeVDSS = -30V2 7A K P-Channel HEXFET3 6 Low VF Schottky RectifierS D RDS(on) = 0.20 Generation 5 Technology45G DTM Micro8 FootprintSchottky Vf = 0.39VDescription Top ViewThe FETKYTM family of co-packaged HEXFETs and Schottky diodes offer th
irf7521d1pbf.pdf
PD- 95241IRF7521D1PbFFETKY MOSFET / Schottky Diodel Co-packaged HEXFET Power MOSFET1 8and Schottky DiodeA KVDSS = 20Vl N-Channel HEXFET2 7A Kl Low VF Schottky Rectifier3 6 RDS(on) = 0.135S Dl Generation 5 TechnologyTM4l Micro8 Footprint 5G DSchottky Vf = 0.39Vl Lead-FreeTop ViewDescriptionThe FETKYTM family of co-packaged HEXFETs and Schottky
irf7524d1.pdf
PD -91648CPRELIMINARYIRF7524D1FETKYTM MOSFET & Schottky Diode Co-packaged HEXFET Power1 8A KMOSFET and Schottky DiodeVDSS = -20V2 7 P-Channel HEXFET A K Low VF Schottky Rectifier3 6S DRDS(on) = 0.27 Generation 5 Technology45TM G D Micro8 FootprintSchottky Vf = 0.39VTop ViewDescriptionThe FETKYTM family of co-packaged HEXFETs and Schottky d
irf7521d1.pdf
PD-91646CIRF7521D1PRELIMINARY FETKY MOSFET / Schottky Diode Co-packaged HEXFET Power MOSFET1 8A Kand Schottky DiodeVDSS = 20V2 7 N-Channel HEXFETA K Low VF Schottky Rectifier3 6 RDS(on) = 0.135S D Generation 5 Technology45TMG D Micro8 FootprintSchottky Vf = 0.39VTop ViewDescriptionThe FETKYTM family of co-packaged HEXFE
irf7524d1pbf.pdf
PD -95242IRF7524D1PbFFETKYTM MOSFET & Schottky Diodel Co-packaged HEXFET Power1 8A KMOSFET and Schottky DiodeVDSS = -20V2 7l P-Channel HEXFET A Kl Low VF Schottky Rectifier3 6S DRDS(on) = 0.27l Generation 5 Technology45TM G Dl Micro8 FootprintSchottky Vf = 0.39Vl Lead-FreeTop ViewDescriptionThe FETKYTM family of co-packaged HEXFETs and Scho
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