IRF7601PBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF7601PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.7 V
|Id|ⓘ - Maximum Drain Current: 5.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 14 nC
trⓘ - Rise Time: 47 nS
Cossⓘ - Output Capacitance: 300 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: MICRO-8
IRF7601PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF7601PBF Datasheet (PDF)
irf7601pbf.pdf
PD - 95244IRF7601PbF Lead-Freewww.irf.com 15/13/04IRF7601PbF2 www.irf.comIRF7601PbFwww.irf.com 3IRF7601PbF4 www.irf.comIRF7601PbFwww.irf.com 5IRF7601PbF6 www.irf.comIRF7601PbFMicro8 Package OutlineDimensions are shown in milimeters (inches)LEAD ASSIGNMENTS INCHES MILLIMETERSD DIM MIN MAX MIN MAX3- B -D D D D D1 D1 D2 D2A .036 .044 0.91
irf7601pbf.pdf
PD - 95244IRF7601PbF Lead-Freewww.irf.com 15/13/04IRF7601PbF2 www.irf.comIRF7601PbFwww.irf.com 3IRF7601PbF4 www.irf.comIRF7601PbFwww.irf.com 5IRF7601PbF6 www.irf.comIRF7601PbFMicro8 Package OutlineDimensions are shown in milimeters (inches)LEAD ASSIGNMENTS INCHES MILLIMETERSD DIM MIN MAX MIN MAX3- B -D D D D D1 D1 D2 D2A .036 .044 0.91
irf7601.pdf
PD - 9.1261DIRF7601HEXFET Power MOSFET Generation V TechnologyAA Ultra Low On-Resistance1 8S D N-Channel MOSFETVDSS = 20V2 7S D Very Small SOIC Package3 6 Low Profile (
irf7603pbf.pdf
PD- 95347IRF7603PbF Lead-Freewww.irf.com 102/22/05IRF7603PbF2 www.irf.comIRF7603PbFwww.irf.com 3IRF7603PbF4 www.irf.comIRF7603PbFwww.irf.com 5IRF7603PbF6 www.irf.comIRF7603PbFMicro8 Package OutlineDimensions are shown in milimeters (inches)LEAD ASSIGNMENTS INCHES MILLIMETERSD DIM MIN MAX MIN MAX3- B -D D D D D1 D1 D2 D2A .036 .044 0.91
irf7603.pdf
PD - 9.1262DIRF7603HEXFET Power MOSFET Generation V TechnologyAA1 8 Ultra Low On-ResistanceS D N-Channel MOSFET VDSS = 30V2 7S D Very Small SOIC Package3 6S D Low Profile (
irf7606pbf.pdf
PD - 95245IRF7606PbFHEXFET Power MOSFETl Generation V TechnologyA1 8l Ultra Low On-ResistanceS Dl P-Channel MOSFET2 7 VDSS = -30VS Dl Very Small SOIC Package3 6S Dl Low Profile (
irf7604.pdf
PD - 9.1263EIRF7604HEXFET Power MOSFET Generation V TechnologyA1 8 Ultra Low On-ResistanceS D P-Channel MOSFETVDSS = -20V2 7S D Very Small SOIC Package3 6S D Low Profile (
irf7607.pdf
PD - 93845PROVISIONALIRF7607HEXFET Power MOSFET Trench TechnologyAA1 8 Ultra Low On-ResistanceS DVDSS = 20V N-Channel MOSFET2 7S D Very Small SOIC Package3 6S D Low Profile (
irf7606.pdf
PD - 9.1264CIRF7606HEXFET Power MOSFET Generation V TechnologyA1 8 Ultra Low On-ResistanceS D P-Channel MOSFET2 7 VDSS = -30VS D Very Small SOIC Package3 6S D Low Profile (
irf7607pbf.pdf
PD - 95698IRF7607PbFHEXFET Power MOSFETl Trench TechnologyAA1 8l Ultra Low On-ResistanceS DVDSS = 20Vl N-Channel MOSFET2 7S Dl Very Small SOIC Package3 6S Dl Low Profile (
irf7607pbf.pdf
PD - 95698IRF7607PbFHEXFET Power MOSFETl Trench TechnologyAA1 8l Ultra Low On-ResistanceS DVDSS = 20Vl N-Channel MOSFET2 7S Dl Very Small SOIC Package3 6S Dl Low Profile (
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: QM2416Y1
History: QM2416Y1
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