All MOSFET. SIHF610 Datasheet

 

SIHF610 Datasheet and Replacement


   Type Designator: SIHF610
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 3.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 8.2 nC
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 53 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO-220AB
 

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SIHF610 Datasheet (PDF)

 ..1. Size:202K  vishay
 irf610 sihf610.pdf pdf_icon

SIHF610

IRF610, SiHF610Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.5RoHS* Fast SwitchingQg (Max.) (nC) 8.2COMPLIANT Ease of ParallelingQgs (nC) 1.8Qgd (nC) 4.5 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

 ..2. Size:202K  vishay
 sihf610.pdf pdf_icon

SIHF610

IRF610, SiHF610Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.5RoHS* Fast SwitchingQg (Max.) (nC) 8.2COMPLIANT Ease of ParallelingQgs (nC) 1.8Qgd (nC) 4.5 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

 0.1. Size:175K  vishay
 irf610s sihf610s irf610l sihf610l.pdf pdf_icon

SIHF610

IRF610S, SiHF610S, IRF610L, SiHF610Lwww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Surface mountVDS (V) 200 Available in tape and reelRDS(on) ()VGS = 10 V 1.5 Dynamic dV/dt ratingAvailableQg (Max.) (nC) 8.2 Repetitive avalanche ratedQgs (nC) 1.8 Fast switchingAvailableQgd (nC) 4.5 Ease of parallelingConfiguration Sing

 0.2. Size:199K  vishay
 sihf610s.pdf pdf_icon

SIHF610

IRF610S, SiHF610SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 200 Surface MountRDS(on) ()VGS = 10 V 1.5 Available in Tape and ReelQg (Max.) (nC) 8.2 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 1.8 Fast SwitchingQgd (nC) 4.5 Ease of Paralleling Simple Drive R

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Keywords - SIHF610 MOSFET datasheet

 SIHF610 cross reference
 SIHF610 equivalent finder
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 SIHF610 substitution
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