SIHF710S MOSFET. Datasheet pdf. Equivalent
Type Designator: SIHF710S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 17 nC
trⓘ - Rise Time: 9.9 nS
Cossⓘ - Output Capacitance: 34 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.6 Ohm
Package: TO-263
SIHF710S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIHF710S Datasheet (PDF)
irf710spbf sihf710s.pdf
IRF710S, SiHF710SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 400 Surface MountRDS(on) ()VGS = 10 V 3.6 Available in Tape and Reel Qg (Max.) (nC) 17 Dynamic dV/dt RatingQgs (nC) 3.4 Repetitive Avalanche Rated Fast SwitchingQgd (nC) 8.5 Ease of ParallelingConfiguration Sin
irf710 sihf710.pdf
IRF710, SiHF710Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.6RoHS*Qg (Max.) (nC) 17 Fast Switching COMPLIANTQgs (nC) 3.4 Ease of ParallelingQgd (nC) 8.5 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDTO
sihf710.pdf
IRF710, SiHF710Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.6RoHS*Qg (Max.) (nC) 17 Fast Switching COMPLIANTQgs (nC) 3.4 Ease of ParallelingQgd (nC) 8.5 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDTO
irf740a sihf740a.pdf
IRF740A, SiHF740AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 400RequirementAvailableRDS(on) ()VGS = 10 V 0.55 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 36COMPLIANTRuggednessQgs (nC) 9.9 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 16and CurrentConfigur
irf720 sihf720.pdf
IRF720, SiHF720Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400 VAvailable Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.8 RoHS* Fast SwitchingQg (Max.) (nC) 20COMPLIANT Ease of ParallelingQgs (nC) 3.3Qgd (nC) 11 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
irf720spbf sihf720s.pdf
IRF720S, SiHF720SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 400 Surface MountRDS(on) ()VGS = 10 V 1.8 Available in Tape and Reel Qg (Max.) (nC) 20 Dynamic dV/dt RatingQgs (nC) 3.3 Repetitive Avalanche Rated Fast SwitchingQgd (nC) 11 Ease of ParallelingConfiguration Sing
irf740spbf sihf740s.pdf
IRF740S, SiHF740SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 400 Surface MountRDS(on) ()VGS = 10 V 0.55 Available in Tape and Reel Qg (Max.) (nC) 63 Dynamic dV/dt RatingQgs (nC) 9.0 Repetitive Avalanche Rated Fast SwitchingQgd (nC) 32 Ease of ParallelingConfiguration Sin
irf720lpbf sihf720l.pdf
IRF720S, SiHF720S, IRF720L, SiHF720Lwww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Surface mount Available in tape and reel VDS (V) 400 Dynamic dV/dt ratingRDS(on) ()VGS = 10 V 1.8Available Repetitive avalanche ratedQg (Max.) (nC) 20 Fast switchingQgs (nC) 3.3 Ease of parallelingAvailable Simple drive requirementsQ
irf740lc irf740lcpbf sihf740lc.pdf
IRF740LC, SiHF740LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 400 Reduced Gate Drive Requirement AvailableRDS(on) ()VGS = 10 V 0.55 Enhanced 30 V VGS RatingRoHS*COMPLIANTQg (Max.) (nC) 39 Reduced Ciss, Coss, CrssQgs (nC) 10 Extremely High Frequency OperationQgd (nC) 19 Repetitive Avalanche Rated Comp
irf740as sihf740as irf740al sihf740al.pdf
IRF740AS, SiHF740AS, IRF740AL, SiHF740ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 400DefinitionRDS(on) ()VGS = 10 V 0.55 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 36 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 9.9RuggednessQgd (nC) 16 Fully Characterized Capac
sihf740al sihf740as.pdf
IRF740AS, SiHF740AS, IRF740AL, SiHF740ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 400DefinitionRDS(on) ()VGS = 10 V 0.55 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 36 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 9.9RuggednessQgd (nC) 16 Fully Characterized Capac
irf730apbf sihf730a.pdf
IRF730A, SiHF730AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg results in Simple DriveVDS (V) 400AvailableRequirementRDS(on) ()VGS = 10 V 1.0RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 22 RuggednessQgs (nC) 5.8 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 9.3 Effecti
irf740 sihf740.pdf
IRF740, SiHF740Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.55RoHS* Fast SwitchingQg (Max.) (nC) 63 COMPLIANT Ease of ParallelingQgs (nC) 9.0Qgd (nC) 32 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDES
irf730s sihf730s.pdf
IRF730S, SiHF730SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 400Definition Surface MountRDS(on) ()VGS = 10 V 1.0 Available in Tape and Reel Qg (Max.) (nC) 38 Dynamic dV/dt RatingQgs (nC) 5.7 Repetitive Avalanche RatedQgd (nC) 22 Fast Switching Ease of ParallelingConfiguration Sing
sihf730.pdf
IRF730, SiHF730Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.0RoHS* Fast SwitchingQg (Max.) (nC) 38COMPLIANT Ease of ParallelingQgs (nC) 5.7Qgd (nC) 22 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDES
irf720pbf sihf720.pdf
IRF720, SiHF720Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400 VAvailable Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.8 RoHS* Fast SwitchingQg (Max.) (nC) 20COMPLIANT Ease of ParallelingQgs (nC) 3.3Qgd (nC) 11 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
irf730spbf sihf730s.pdf
IRF730S, SiHF730SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 400Definition Surface MountRDS(on) ()VGS = 10 V 1.0 Available in Tape and Reel Qg (Max.) (nC) 38 Dynamic dV/dt RatingQgs (nC) 5.7 Repetitive Avalanche RatedQgd (nC) 22 Fast Switching Ease of ParallelingConfiguration Sing
irf740lc sihf740lc.pdf
IRF740LC, SiHF740LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 400 Reduced Gate Drive Requirement AvailableRDS(on) ()VGS = 10 V 0.55 Enhanced 30 V VGS RatingRoHS*COMPLIANTQg (Max.) (nC) 39 Reduced Ciss, Coss, CrssQgs (nC) 10 Extremely High Frequency OperationQgd (nC) 19 Repetitive Avalanche Rated Comp
irf730 sihf730.pdf
IRF730, SiHF730Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.0RoHS* Fast SwitchingQg (Max.) (nC) 38COMPLIANT Ease of ParallelingQgs (nC) 5.7Qgd (nC) 22 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDES
irf730a sihf730a.pdf
IRF730A, SiHF730AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg results in Simple DriveVDS (V) 400AvailableRequirementRDS(on) ()VGS = 10 V 1.0RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 22 RuggednessQgs (nC) 5.8 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 9.3 Effecti
irf740s sihf740s.pdf
IRF740S, SiHF740SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 400 Surface MountRDS(on) ()VGS = 10 V 0.55 Available in Tape and Reel Qg (Max.) (nC) 63 Dynamic dV/dt RatingQgs (nC) 9.0 Repetitive Avalanche Rated Fast SwitchingQgd (nC) 32 Ease of ParallelingConfiguration Sin
irf730alpbf irf730aspbf sihf730al sihf730as.pdf
IRF730AS, SiHF730AS, IRF730AL, SiHF730ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 400DefinitionRDS(on) (Max.) ()VGS = 10 V 1.0 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 22 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 5.8RuggednessQgd (nC) 9.3 Fully Characteriz
irf740apbf sihf740a.pdf
IRF740A, SiHF740AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 400RequirementAvailableRDS(on) ()VGS = 10 V 0.55 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 36COMPLIANTRuggednessQgs (nC) 9.9 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 16and CurrentConfigur
sihf7n60e.pdf
SiHF7N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.6 Reduced Switching and Conduction LossesQg max. (nC) 40 Ultra Low Gate Charge (Qg)Qgs (nC) 5 Avalanche Energy Rated (UIS)Qgd (nC) 9 Mate
irf740pbf sihf740.pdf
IRF740, SiHF740Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.55RoHS* Fast SwitchingQg (Max.) (nC) 63 COMPLIANT Ease of ParallelingQgs (nC) 9.0Qgd (nC) 32 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDES
irf720 sihf720.pdf
IRF720, SiHF720Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400 VAvailable Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.8 RoHS* Fast SwitchingQg (Max.) (nC) 20COMPLIANT Ease of ParallelingQgs (nC) 3.3Qgd (nC) 11 Simple Drive RequirementsConfiguration Single Lead (Pb)-free AvailableDDESCRIPTION
irf730 sihf730.pdf
IRF730, SiHF730Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.0RoHS* Fast SwitchingQg (Max.) (nC) 38COMPLIANT Ease of ParallelingQgs (nC) 5.7Qgd (nC) 22 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDES
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
LIST
Last Update
MOSFET: FIR9N90FG | FIR9N65LG | FIR9N50FG | FIR96N08PG | FIR8N80FG | FIR8N70FG | FIR8N65FG | FIR8N60FG | FIR80N10LG | FIR80N08PG | FIR80N03LG | FIR7NS70ALG | FIR7NS70AFG | FIR7NS65AFG | FIR6N90FG | FIR6N70FG