SIHF710S Datasheet. Specs and Replacement

Type Designator: SIHF710S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.9 nS

Cossⓘ - Output Capacitance: 34 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.6 Ohm

Package: TO-263

SIHF710S substitution

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SIHF710S datasheet

 ..1. Size:198K  vishay
irf710spbf sihf710s.pdf pdf_icon

SIHF710S

IRF710S, SiHF710S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 400 Surface Mount RDS(on) ( )VGS = 10 V 3.6 Available in Tape and Reel Qg (Max.) (nC) 17 Dynamic dV/dt Rating Qgs (nC) 3.4 Repetitive Avalanche Rated Fast Switching Qgd (nC) 8.5 Ease of Paralleling Configuration Sin... See More ⇒

 7.1. Size:203K  vishay
irf710 sihf710.pdf pdf_icon

SIHF710S

IRF710, SiHF710 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.6 RoHS* Qg (Max.) (nC) 17 Fast Switching COMPLIANT Qgs (nC) 3.4 Ease of Paralleling Qgd (nC) 8.5 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D TO... See More ⇒

 7.2. Size:197K  vishay
sihf710.pdf pdf_icon

SIHF710S

IRF710, SiHF710 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.6 RoHS* Qg (Max.) (nC) 17 Fast Switching COMPLIANT Qgs (nC) 3.4 Ease of Paralleling Qgd (nC) 8.5 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D TO... See More ⇒

 9.1. Size:205K  vishay
irf740a sihf740a.pdf pdf_icon

SIHF710S

IRF740A, SiHF740A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 400 Requirement Available RDS(on) ( )VGS = 10 V 0.55 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 36 COMPLIANT Ruggedness Qgs (nC) 9.9 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 16 and Current Configur... See More ⇒

Detailed specifications: SIHF640, SIHF640L, SIHF640S, SIHF644, SIHF644S, SIHF6N40D, SIHF6N65E, SIHF710, AON7410, SIHF720, SIHF720L, SIHF720S, SIHF730, SIHF730A, SIHF730AL, SIHF730AS, SIHF730S

Keywords - SIHF710S MOSFET specs

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