SIHF7N60E Datasheet. Specs and Replacement

Type Designator: SIHF7N60E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 39 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO-220FP

SIHF7N60E substitution

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SIHF7N60E datasheet

 ..1. Size:162K  vishay
sihf7n60e.pdf pdf_icon

SIHF7N60E

SiHF7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low Input Capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.6 Reduced Switching and Conduction Losses Qg max. (nC) 40 Ultra Low Gate Charge (Qg) Qgs (nC) 5 Avalanche Energy Rated (UIS) Qgd (nC) 9 Mate... See More ⇒

 9.1. Size:205K  vishay
irf740a sihf740a.pdf pdf_icon

SIHF7N60E

IRF740A, SiHF740A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 400 Requirement Available RDS(on) ( )VGS = 10 V 0.55 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 36 COMPLIANT Ruggedness Qgs (nC) 9.9 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 16 and Current Configur... See More ⇒

 9.2. Size:198K  vishay
irf710spbf sihf710s.pdf pdf_icon

SIHF7N60E

IRF710S, SiHF710S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 400 Surface Mount RDS(on) ( )VGS = 10 V 3.6 Available in Tape and Reel Qg (Max.) (nC) 17 Dynamic dV/dt Rating Qgs (nC) 3.4 Repetitive Avalanche Rated Fast Switching Qgd (nC) 8.5 Ease of Paralleling Configuration Sin... See More ⇒

 9.3. Size:201K  vishay
irf720 sihf720.pdf pdf_icon

SIHF7N60E

IRF720, SiHF720 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 V Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.8 RoHS* Fast Switching Qg (Max.) (nC) 20 COMPLIANT Ease of Paralleling Qgs (nC) 3.3 Qgd (nC) 11 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D ... See More ⇒

Detailed specifications: SIHF730AS, SIHF730S, SIHF740, SIHF740A, SIHF740AL, SIHF740AS, SIHF740LC, SIHF740S, 4N60, SIHF820, SIHF820A, SIHF820AL, SIHF820AS, SIHF820L, SIHF820S, SIHF830, SIHF830A

Keywords - SIHF7N60E MOSFET specs

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