SIHF820L Datasheet and Replacement

IRF820S, SiHF820S, IRF820L, SiHF820Lwww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Surface mountVDS (V) 500 Available in tape and reel RDS(on) ()VGS = 10 V 3.0Available Dynamic dV/dt ratingQg (Max.) (nC) 24 Repetitive avalanche ratedQgs (nC) 3.3Available Fast switchingQgd (nC) 13 Ease of parallelingConfiguration Singl

IRF820, SiHF820Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0RoHS* Fast SwitchingQg (Max.) (nC) 24COMPLIANT Ease of ParallelingQgs (nC) 3.3Qgd (nC) 13 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDESCR

IRF820A, SiHF820AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 3.0 Improved Gate, Avalanche and Dynamic dV/dtRoHS*COMPLIANTQg (Max.) (nC) 17 RuggednessQgs (nC) 4.3 Fully Characterized Capacitance and Avalanche Voltageand currentQgd (nC) 8.5 Effecti

IRF820S, SiHF820SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 500 Surface MountRDS(on) ()VGS = 10 V 3.0 Available in Tape and Reel Qg (Max.) (nC) 24 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 3.3 Fast SwitchingQgd (nC) 13 Ease of Paralleling Simple Drive Re

IRF820AS, SiHF820AS, IRF820AL, SiHF820ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) (Max.) ()VGS = 10 V 3.0 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 17 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 4.3RuggednessQgd (nC) 8.5 Fully Characterize

IRF820A, SiHF820AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 3.0 Improved Gate, Avalanche and Dynamic dV/dtRoHS*COMPLIANTQg (Max.) (nC) 17 RuggednessQgs (nC) 4.3 Fully Characterized Capacitance and Avalanche Voltageand currentQgd (nC) 8.5 Effecti

IRF820, SiHF820Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0RoHS* Fast SwitchingQg (Max.) (nC) 24COMPLIANT Ease of ParallelingQgs (nC) 3.3Qgd (nC) 13 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDESCR

IRF820, SiHF820Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0RoHS* Fast SwitchingQg (Max.) (nC) 24COMPLIANT Ease of ParallelingQgs (nC) 3.3Qgd (nC) 13 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDESCR