SIHF840 Datasheet. Specs and Replacement

Type Designator: SIHF840

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 310 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO-220AB

SIHF840 substitution

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SIHF840 datasheet

 ..1. Size:195K  vishay
irf840 sihf840.pdf pdf_icon

SIHF840

IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.85 RoHS* Fast Switching Qg (Max.) (nC) 63 COMPLIANT Ease of Paralleling Qgs (nC) 9.3 Qgd (nC) 32 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DE... See More ⇒

 ..2. Size:195K  vishay
sihf840.pdf pdf_icon

SIHF840

IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.85 RoHS* Fast Switching Qg (Max.) (nC) 63 COMPLIANT Ease of Paralleling Qgs (nC) 9.3 Qgd (nC) 32 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DE... See More ⇒

 0.1. Size:207K  vishay
sihf840a.pdf pdf_icon

SIHF840

IRF840A, SiHF840A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.85 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 38 COMPLIANT Ruggedness Qgs (nC) 9.0 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 18 and Current Configura... See More ⇒

 0.2. Size:206K  vishay
irf840a sihf840a.pdf pdf_icon

SIHF840

IRF840A, SiHF840A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.85 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 38 COMPLIANT Ruggedness Qgs (nC) 9.0 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 18 and Current Configura... See More ⇒

Detailed specifications: SIHF820L, SIHF820S, SIHF830, SIHF830A, SIHF830AL, SIHF830AS, SIHF830L, SIHF830S, STF13NM60N, SIHF840A, SIHF840AL, SIHF840AS, SIHF840L, SIHF840LC, SIHF840LCL, SIHF840LCS, SIHF840S

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.