All MOSFET. SIHF840AS Datasheet

 

SIHF840AS Datasheet and Replacement


   Type Designator: SIHF840AS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 155 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO-263
 

 SIHF840AS substitution

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SIHF840AS Datasheet (PDF)

 ..1. Size:206K  vishay
irf840as sihf840as irf840al sihf840al.pdf pdf_icon

SIHF840AS

IRF840AS, SiHF840AS, IRF840AL, SiHF840ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) ()VGS = 10 V 0.85 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 38 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 9.0RuggednessQgd (nC) 18 Fully Characterized Capa

 ..2. Size:199K  vishay
irf840alpbf irf840aspbf sihf840al sihf840as.pdf pdf_icon

SIHF840AS

IRF840AS, SiHF840AS, IRF840AL, SiHF840ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) ()VGS = 10 V 0.85 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 38 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 9.0RuggednessQgd (nC) 18 Fully Characterized Capa

 6.1. Size:207K  vishay
sihf840a.pdf pdf_icon

SIHF840AS

IRF840A, SiHF840AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500Requirement AvailableRDS(on) ()VGS = 10 V 0.85 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 38COMPLIANTRuggednessQgs (nC) 9.0 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 18and CurrentConfigura

 6.2. Size:206K  vishay
irf840a sihf840a.pdf pdf_icon

SIHF840AS

IRF840A, SiHF840AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500Requirement AvailableRDS(on) ()VGS = 10 V 0.85 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 38COMPLIANTRuggednessQgs (nC) 9.0 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 18and CurrentConfigura

Datasheet: SIHF830A , SIHF830AL , SIHF830AS , SIHF830L , SIHF830S , SIHF840 , SIHF840A , SIHF840AL , K2611 , SIHF840L , SIHF840LC , SIHF840LCL , SIHF840LCS , SIHF840S , SIHF8N50D , SIHF8N50L , SIHF9510 .

History: AOTS21319C | AO4566 | EKI04036 | UTT6NP10G-S08-R | SIA537EDJ | HUFA75309D3S | QM2N7002E3K1

Keywords - SIHF840AS MOSFET datasheet

 SIHF840AS cross reference
 SIHF840AS equivalent finder
 SIHF840AS lookup
 SIHF840AS substitution
 SIHF840AS replacement

 

 
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