SIHF840AS Datasheet. Specs and Replacement

Type Designator: SIHF840AS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 155 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO-263

SIHF840AS substitution

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SIHF840AS datasheet

 ..1. Size:206K  vishay
irf840as sihf840as irf840al sihf840al.pdf pdf_icon

SIHF840AS

IRF840AS, SiHF840AS, IRF840AL, SiHF840AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition RDS(on) ( )VGS = 10 V 0.85 Low Gate Charge Qg Results in Simple Drive Requirement Qg (Max.) (nC) 38 Improved Gate, Avalanche and Dynamic dV/dt Qgs (nC) 9.0 Ruggedness Qgd (nC) 18 Fully Characterized Capa... See More ⇒

 ..2. Size:199K  vishay
irf840alpbf irf840aspbf sihf840al sihf840as.pdf pdf_icon

SIHF840AS

IRF840AS, SiHF840AS, IRF840AL, SiHF840AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition RDS(on) ( )VGS = 10 V 0.85 Low Gate Charge Qg Results in Simple Drive Requirement Qg (Max.) (nC) 38 Improved Gate, Avalanche and Dynamic dV/dt Qgs (nC) 9.0 Ruggedness Qgd (nC) 18 Fully Characterized Capa... See More ⇒

 6.1. Size:207K  vishay
sihf840a.pdf pdf_icon

SIHF840AS

IRF840A, SiHF840A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.85 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 38 COMPLIANT Ruggedness Qgs (nC) 9.0 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 18 and Current Configura... See More ⇒

 6.2. Size:206K  vishay
irf840a sihf840a.pdf pdf_icon

SIHF840AS

IRF840A, SiHF840A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.85 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 38 COMPLIANT Ruggedness Qgs (nC) 9.0 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 18 and Current Configura... See More ⇒

Detailed specifications: SIHF830A, SIHF830AL, SIHF830AS, SIHF830L, SIHF830S, SIHF840, SIHF840A, SIHF840AL, 8N60, SIHF840L, SIHF840LC, SIHF840LCL, SIHF840LCS, SIHF840S, SIHF8N50D, SIHF8N50L, SIHF9510

Keywords - SIHF840AS MOSFET specs

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