IRL530N MOSFET Datasheet: N-Ch, 100V, 17A. Full specification with pinout and replacement list

IRL530N Specs and Replacement

Type Designator: IRL530N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 79 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 53 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO220

IRL530N substitution

- MOSFET ⓘ Cross-Reference Search

IRL530N datasheet

..1. Size:127K international rectifier
irl530n.pdf pdf_icon

PD - 91348B IRL530N HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 100V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.10 Fast Switching G Fully Avalanche Rated ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per ... See More ⇒

..2. Size:581K international rectifier
irl530npbf.pdf pdf_icon

PD - 95451 IRL530NPbF Lead-Free www.irf.com 1 6/23/04 IRL530NPbF 2 www.irf.com IRL530NPbF www.irf.com 3 IRL530NPbF 4 www.irf.com IRL530NPbF www.irf.com 5 IRL530NPbF 6 www.irf.com IRL530NPbF www.irf.com 7 IRL530NPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.13... See More ⇒

..3. Size:244K inchange semiconductor
irl530n.pdf pdf_icon

isc N-Channel MOSFET Transistor IRL530N IIRL530N FEATURES Static drain-source on-resistance RDS(on) 0.1 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒

0.1. Size:178K international rectifier
irl530ns irl530nl.pdf pdf_icon

PD - 91349B IRL530NS/L HEXFET Power MOSFET Advanced Process Technology D VDSS =100V Surface Mount (IRL530NS) Low-profile through-hole (IRL530NL) 175 C Operating Temperature RDS(on) = 0.10 G Fast Switching Fully Avalanche Rated ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low ... See More ⇒