All MOSFET. SIHF9Z14S Datasheet

 

SIHF9Z14S Datasheet and Replacement


   Type Designator: SIHF9Z14S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.7 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 63 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: TO-263
 

 SIHF9Z14S substitution

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SIHF9Z14S Datasheet (PDF)

 ..1. Size:194K  vishay
 irf9z14spbf sihf9z14l sihf9z14s.pdf pdf_icon

SIHF9Z14S

IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 60 Advanced Process TechnologyRDS(on) ()VGS = - 10 V 0.50 Surface Mount (IRF9Z14S, SiHF9Z14S)Qg (Max.) (nC) 12 Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L) 175 C Operating TemperatureQgs (nC) 3.8

 ..2. Size:169K  vishay
 irf9z14s sihf9z14s irf9z14l sihf9z14l.pdf pdf_icon

SIHF9Z14S

IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 60 Advanced Process TechnologyRDS(on) ()VGS = - 10 V 0.50 Surface Mount (IRF9Z14S, SiHF9Z14S)Qg (Max.) (nC) 12 Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L) 175 C Operating TemperatureQgs (nC) 3.8

 6.1. Size:127K  vishay
 irf9z14 sihf9z14.pdf pdf_icon

SIHF9Z14S

IRF9Z14, SiHF9Z14Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.50RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 12 175 C Operating TemperatureQgs (nC) 3.8 Fast SwitchingQgd (nC) 5.1 Ease of ParallelingConfiguration Single Simple Drive Requir

 6.2. Size:129K  vishay
 irf9z14pbf sihf9z14.pdf pdf_icon

SIHF9Z14S

IRF9Z14, SiHF9Z14Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.50RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 12 175 C Operating TemperatureQgs (nC) 3.8 Fast SwitchingQgd (nC) 5.1 Ease of ParallelingConfiguration Single Simple Drive Requir

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Datasheet: SIHF9630 , SIHF9630S , SIHF9640 , SIHF9640L , SIHF9640S , SIHF9Z10 , SIHF9Z14 , SIHF9Z14L , IRF840 , SIHF9Z20 , SIHF9Z22 , SIHF9Z24 , SIHF9Z24L , SIHF9Z24S , SIHF9Z30 , SIHF9Z34 , SIHF9Z34L .

History: IXFH21N50F | AOWF10N60 | IPA60R250CP | AP9977GM | DMT6009LPS | FQPF5P10 | AFN3436

Keywords - SIHF9Z14S MOSFET datasheet

 SIHF9Z14S cross reference
 SIHF9Z14S equivalent finder
 SIHF9Z14S lookup
 SIHF9Z14S substitution
 SIHF9Z14S replacement

 

 
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