SIHFB9N60A Datasheet. Specs and Replacement

Type Designator: SIHFB9N60A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 170 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: TO-220AB

SIHFB9N60A substitution

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SIHFB9N60A datasheet

 ..1. Size:212K  vishay
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SIHFB9N60A

IRFB9N60A, SiHFB9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 0.75 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 49 COMPLIANT Ruggedness Qgs (nC) 13 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 20 and Current Config... See More ⇒

 ..2. Size:211K  vishay
irfb9n60a sihfb9n60a.pdf pdf_icon

SIHFB9N60A

IRFB9N60A, SiHFB9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 0.75 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 49 COMPLIANT Ruggedness Qgs (nC) 13 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 20 and Current Config... See More ⇒

 6.1. Size:223K  vishay
sihfb9n65a.pdf pdf_icon

SIHFB9N60A

IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Requirement Available RDS(on) ( )VGS = 10 V 0.93 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 48 COMPLIANT Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 19 and Current Configu... See More ⇒

 6.2. Size:223K  vishay
irfb9n65a sihfb9n65a.pdf pdf_icon

SIHFB9N60A

IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Requirement Available RDS(on) ( )VGS = 10 V 0.93 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 48 COMPLIANT Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 19 and Current Configu... See More ⇒

Detailed specifications: SIHF9Z24L, SIHF9Z24S, SIHF9Z30, SIHF9Z34, SIHF9Z34L, SIHF9Z34S, SIHFB13N50A, SIHFB17N50L, IRFP260N, SIHFB9N65A, SIHFBC20, SIHFBC20L, SIHFBC20S, SIHFBC30, SIHFBC30A, SIHFBC30AL, SIHFBC30AS

Keywords - SIHFB9N60A MOSFET specs

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