SIHFBC30S Datasheet. Specs and Replacement

Type Designator: SIHFBC30S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 74 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 86 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm

Package: TO-263

SIHFBC30S substitution

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SIHFBC30S datasheet

 ..1. Size:290K  vishay
sihfbc30l sihfbc30s.pdf pdf_icon

SIHFBC30S

IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 600 Surface Mount (IRFBC30S, SiHFBC30S) RDS(on) ( )VGS = 10 V 2.2 Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) Qg (Max.) (nC) 31 Available in Tape and Reel (IRFBC30S, SiHFBC30S) Dynamic dV/dt Rating Qgs ... See More ⇒

 ..2. Size:264K  vishay
irfbc30s sihfbc30s irfbc30l sihfbc30l.pdf pdf_icon

SIHFBC30S

IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 600 Surface Mount (IRFBC30S, SiHFBC30S) RDS(on) ( )VGS = 10 V 2.2 Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) Qg (Max.) (nC) 31 Available in Tape and Reel (IRFBC30S, SiHFBC30S) Dynamic dV/dt Rating Qgs ... See More ⇒

 6.1. Size:1805K  vishay
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SIHFBC30S

IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 2.2 Fast Switching RoHS* Qg (Max.) (nC) 31 COMPLIANT Ease of Paralleling Qgs (nC) 4.6 Simple Drive Requirements Qgd (nC) 17 Compliant to RoHS Directive 2002/95/EC Configuration Single D DE... See More ⇒

 6.2. Size:216K  vishay
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SIHFBC30S

IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 2.2 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 23 COMPLIANT Ruggedness Qgs (nC) 5.4 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 11 and Current Configur... See More ⇒

Detailed specifications: SIHFBC20, SIHFBC20L, SIHFBC20S, SIHFBC30, SIHFBC30A, SIHFBC30AL, SIHFBC30AS, SIHFBC30L, 7N65, SIHFBC40, SIHFBC40A, SIHFBC40AS, SIHFBC40L, SIHFBC40LC, SIHFBC40S, SIHFBE20, SIHFBE30

Keywords - SIHFBC30S MOSFET specs

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