SIHFBE30L MOSFET. Datasheet pdf. Equivalent

   Type Designator: SIHFBE30L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 78 nC
   trⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO-262

SIHFBE30L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SIHFBE30L Datasheet (PDF)

..1. Size:448K vishay
irfbe30s sihfbe30s irfbe30l sihfbe30l.pdf

IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 800DefinitionRDS(on) ()VGS = 10 V 3.0 Dynamic dV/dt RatingQg (Max.) (nC) 78 Repetitive Avalanche RatedQgs (nC) 9.6 Fast SwitchingQgd (nC) 45 Ease of ParallelingConfiguration Single Simple Drive Requirem

..2. Size:473K vishay
sihfbe30l sihfbe30s.pdf

6.1. Size:1517K vishay
irfbe30 sihfbe30.pdf

IRFBE30, SiHFBE30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0RoHS* Fast SwitchingQg (Max.) (nC) 78COMPLIANT Ease of ParallelingQgs (nC) 9.6Qgd (nC) 45 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

6.2. Size:1520K vishay
sihfbe30.pdf