All MOSFET. SIHFI530G Datasheet

 

SIHFI530G Datasheet and Replacement


   Type Designator: SIHFI530G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9.7 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: TO-220FP
 

 SIHFI530G substitution

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SIHFI530G Datasheet (PDF)

 ..1. Size:932K  vishay
 irfi530g irfi530gpbf sihfi530g.pdf pdf_icon

SIHFI530G

IRFI530G, SiHFI530GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;f = 60 Hz)RDS(on) ()VGS = 10 V 0.16RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 33 175 C Operating TemperatureQgs (nC) 5.4 Dynamic dV/dt RatingQgd (nC) 15 Low T

 8.1. Size:1038K  vishay
 irfi510g irfi510gpbf sihfi510g.pdf pdf_icon

SIHFI530G

IRFI510G, SiHFI510GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Availablef = 60 Hz)RDS(on) ()VGS = 10 V 0.54RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 8.3 175 C Operating TemperatureQgs (nC) 2.3 Dynamic dV/dt RatingQgd (nC) 3.8 Low

 8.2. Size:1473K  vishay
 irfi540g sihfi540g.pdf pdf_icon

SIHFI530G

IRFI540G, SiHFI540GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 0.077 f = 60 Hz)RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 72COMPLIANT 175 C Operating TemperatureQgs (nC) 11 Dynamic dV/dt RatingQgd (nC) 32 Low T

 8.3. Size:1603K  vishay
 irfi520g irfi520gpbf sihfi520g.pdf pdf_icon

SIHFI530G

IRFI520G, SiHFI520GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.27f = 60 Hz) RoHS*COMPLIANTQg (Max.) (nC) 16 Sink to Lead Creepage Distance = 4.8 mm 175 C Operating TemperatureQgs (nC) 4.4 Dynamic dV/dt RatingQgd (nC) 7.7 Low Th

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Datasheet: SIHFD9024 , SIHFD9110 , SIHFD9120 , SIHFD9210 , SIHFD9220 , SIHFDC20 , SIHFI510G , SIHFI520G , IRFZ46N , SIHFI540G , SIHFI614G , SIHFI620G , SIHFI630G , SIHFI634G , SIHFI640G , SIHFI644G , SIHFI720G .

History: MTN12N65FP | AP3990R-HF | 2SK664 | MPSW65M046CFD | STL8N10LF3 | SFB044N100C3 | MMIS70H900QTH

Keywords - SIHFI530G MOSFET datasheet

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