All MOSFET. SIHFI830G Datasheet

 

SIHFI830G MOSFET. Datasheet pdf. Equivalent

Type Designator: SIHFI830G

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 35 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 3.1 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 38 nC

Rise Time (tr): 16 nS

Drain-Source Capacitance (Cd): 160 pF

Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm

Package: TO-220FP

SIHFI830G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIHFI830G Datasheet (PDF)

1.1. sihfi830g.pdf Size:1541K _upd-mosfet

SIHFI830G
SIHFI830G

IRFI830G, SiHFI830G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) 500 Available • High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (Ω)VGS = 10 V 1.5 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 38 • Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 5.0 • Dynamic dV/dt Rating Qgd (nC) 22 • Low Thermal Resistance • Lead (Pb)-free

1.2. irfi830g sihfi830g.pdf Size:1540K _vishay

SIHFI830G
SIHFI830G

IRFI830G, SiHFI830G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 500 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (?)VGS = 10 V 1.5 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 38 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 5.0 Dynamic dV/dt Rating Qgd (nC) 22 Low Thermal Resistance Lead (Pb)-free Available Conf

 4.1. sihfi840g.pdf Size:2786K _upd-mosfet

SIHFI830G
SIHFI830G

IRFI840G, SiHFI840G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) 500 Available • High Voltage Isolation = 2.5 kVRMS (t = 60 s, RDS(on) (Ω)VGS = 10 V 0.85 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 67 • Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 10 • Dynamic dV/dt Rating Qgd (nC) 34 • Low Thermal Resistance Configuration Si

4.2. sihfi840glc.pdf Size:1651K _upd-mosfet

SIHFI830G
SIHFI830G

IRFI840GLC, SiHFI840GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Ultra Low Gate Charge VDS (V) 500 • Reduced Gate Drive Requirement Available RDS(on) (Ω)VGS = 10 V 0.85 • Enhanced 30 V VGS Rating RoHS* Qg (Max.) (nC) 39 COMPLIANT • Isolated Package Qgs (nC) 10 • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) Qgd (nC) 19 • Sink to Lead Cr

 4.3. sihfi820g.pdf Size:1783K _upd-mosfet

SIHFI830G
SIHFI830G

IRFI820G, SiHFI820G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) 500 • High Voltage Isolation = 2.5 kVRMS (t = 60 s, Available RDS(on) (Ω)VGS = 10 V 3.0 f = 60 Hz) RoHS* Qg (Max.) (nC) 24 COMPLIANT • Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 3.3 • Dynamic dV/dt Rating Qgd (nC) 13 • Low Thermal Resistance Configuration Si

4.4. irfi820g sihfi820g.pdf Size:1793K _vishay

SIHFI830G
SIHFI830G

IRFI820G, SiHFI820G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 500 High Voltage Isolation = 2.5 kVRMS (t = 60 s, Available RDS(on) (?)VGS = 10 V 3.0 f = 60 Hz) RoHS* Qg (Max.) (nC) 24 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 3.3 Dynamic dV/dt Rating Qgd (nC) 13 Low Thermal Resistance Configuration Single Lead (

 4.5. irfi840glc sihfi840glc.pdf Size:1649K _vishay

SIHFI830G
SIHFI830G

IRFI840GLC, SiHFI840GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 500 Reduced Gate Drive Requirement Available RDS(on) (?)VGS = 10 V 0.85 Enhanced 30 V VGS Rating RoHS* Qg (Max.) (nC) 39 COMPLIANT Isolated Package Qgs (nC) 10 High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) Qgd (nC) 19 Sink to Lead Creepage Distance

4.6. irfi840g sihfi840g.pdf Size:2785K _vishay

SIHFI830G
SIHFI830G

IRFI840G, SiHFI840G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 500 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s, RDS(on) (?)VGS = 10 V 0.85 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 67 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 10 Dynamic dV/dt Rating Qgd (nC) 34 Low Thermal Resistance Configuration Single Lead (

Datasheet: SIHFI634G , SIHFI640G , SIHFI644G , SIHFI720G , SIHFI730G , SIHFI740G , SIHFI740GLC , SIHFI820G , 40673 , SIHFI840G , SIHFI840GLC , SIHFI9520G , SIHFI9530G , SIHFI9540G , SIHFI9610G , SIHFI9620G , SIHFI9630G .

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