SIHFI830G Datasheet. Specs and Replacement

Type Designator: SIHFI830G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO-220FP

SIHFI830G substitution

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SIHFI830G datasheet

 ..1. Size:1541K  vishay
 irfi830gpbf sihfi830g.pdf pdf_icon

SIHFI830G

IRFI830G, SiHFI830G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 500 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 1.5 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 38 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 5.0 Dynamic dV/dt Rating Qgd (nC) 22 Low Thermal Resistance Lead (Pb)-free... See More ⇒

 ..2. Size:1540K  vishay
 irfi830g sihfi830g.pdf pdf_icon

SIHFI830G

IRFI830G, SiHFI830G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 500 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 1.5 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 38 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 5.0 Dynamic dV/dt Rating Qgd (nC) 22 Low Thermal Resistance Lead (Pb)-free... See More ⇒

 8.1. Size:1651K  vishay
 irfi840glcpbf sihfi840glc.pdf pdf_icon

SIHFI830G

IRFI840GLC, SiHFI840GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 500 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.85 Enhanced 30 V VGS Rating RoHS* Qg (Max.) (nC) 39 COMPLIANT Isolated Package Qgs (nC) 10 High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) Qgd (nC) 19 Sink to Lead Cr... See More ⇒

 8.2. Size:2786K  vishay
 sihfi840g.pdf pdf_icon

SIHFI830G

IRFI840G, SiHFI840G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 500 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s, RDS(on) ( )VGS = 10 V 0.85 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 67 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 10 Dynamic dV/dt Rating Qgd (nC) 34 Low Thermal Resistance Configuration Si... See More ⇒

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Detailed specifications: SIHFI634G, SIHFI640G, SIHFI644G, SIHFI720G, SIHFI730G, SIHFI740G, SIHFI740GLC, SIHFI820G, IRFB31N20D, SIHFI840G, SIHFI840GLC, SIHFI9520G, SIHFI9530G, SIHFI9540G, SIHFI9610G, SIHFI9620G, SIHFI9630G

Keywords - SIHFI830G MOSFET specs

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