SIHFI840GLC MOSFET. Datasheet pdf. Equivalent
Type Designator: SIHFI840GLC
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 39 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 170 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO-220FP
SIHFI840GLC Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIHFI840GLC Datasheet (PDF)
irfi840glcpbf sihfi840glc.pdf
IRFI840GLC, SiHFI840GLCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.85 Enhanced 30 V VGS RatingRoHS*Qg (Max.) (nC) 39COMPLIANT Isolated PackageQgs (nC) 10 High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)Qgd (nC) 19 Sink to Lead Cr
irfi840glc sihfi840glc.pdf
IRFI840GLC, SiHFI840GLCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.85 Enhanced 30 V VGS RatingRoHS*Qg (Max.) (nC) 39COMPLIANT Isolated PackageQgs (nC) 10 High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)Qgd (nC) 19 Sink to Lead Cr
sihfi840g.pdf
IRFI840G, SiHFI840GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 500Available High Voltage Isolation = 2.5 kVRMS (t = 60 s,RDS(on) ()VGS = 10 V 0.85f = 60 Hz)RoHS*COMPLIANTQg (Max.) (nC) 67 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 10 Dynamic dV/dt RatingQgd (nC) 34 Low Thermal ResistanceConfiguration Si
irfi840g sihfi840g.pdf
IRFI840G, SiHFI840GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 500Available High Voltage Isolation = 2.5 kVRMS (t = 60 s,RDS(on) ()VGS = 10 V 0.85f = 60 Hz)RoHS*COMPLIANTQg (Max.) (nC) 67 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 10 Dynamic dV/dt RatingQgd (nC) 34 Low Thermal ResistanceConfiguration Si
irfi820g sihfi820g.pdf
IRFI820G, SiHFI820GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 500 High Voltage Isolation = 2.5 kVRMS (t = 60 s,AvailableRDS(on) ()VGS = 10 V 3.0f = 60 Hz)RoHS*Qg (Max.) (nC) 24COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 3.3 Dynamic dV/dt RatingQgd (nC) 13 Low Thermal ResistanceConfiguration Si
irfi820gpbf sihfi820g.pdf
IRFI820G, SiHFI820GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 500 High Voltage Isolation = 2.5 kVRMS (t = 60 s,AvailableRDS(on) ()VGS = 10 V 3.0f = 60 Hz)RoHS*Qg (Max.) (nC) 24COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 3.3 Dynamic dV/dt RatingQgd (nC) 13 Low Thermal ResistanceConfiguration Si
irfi830gpbf sihfi830g.pdf
IRFI830G, SiHFI830GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 500Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 1.5f = 60 Hz)RoHS*COMPLIANTQg (Max.) (nC) 38 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 5.0 Dynamic dV/dt RatingQgd (nC) 22 Low Thermal Resistance Lead (Pb)-free
irfi830g sihfi830g.pdf
IRFI830G, SiHFI830GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 500Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 1.5f = 60 Hz)RoHS*COMPLIANTQg (Max.) (nC) 38 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 5.0 Dynamic dV/dt RatingQgd (nC) 22 Low Thermal Resistance Lead (Pb)-free
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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