All MOSFET. SIHFI9530G Datasheet

 

SIHFI9530G Datasheet and Replacement


   Type Designator: SIHFI9530G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.7 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 52 nS
   Cossⓘ - Output Capacitance: 340 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO-220FP
 

 SIHFI9530G substitution

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SIHFI9530G Datasheet (PDF)

 ..1. Size:1458K  vishay
 irfi9530g sihfi9530g.pdf pdf_icon

SIHFI9530G

IRFI9530G, SiHFI9530GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.30RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 38 COMPLIANT P-ChannelQgs (nC) 6.8 175 C Operating TemperatureQgd (nC) 21 Dynamic dV/

 ..2. Size:1460K  vishay
 irfi9530gpbf sihfi9530g.pdf pdf_icon

SIHFI9530G

IRFI9530G, SiHFI9530GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.30RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 38 COMPLIANT P-ChannelQgs (nC) 6.8 175 C Operating TemperatureQgd (nC) 21 Dynamic dV/

 7.1. Size:1446K  vishay
 irfi9520g sihfi9520g.pdf pdf_icon

SIHFI9530G

IRFI9520G, SiHFI9520GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = - 10 V 0.60f = 60 Hz)RoHS*Qg (Max.) (nC) 18 Sink to Lead Creepage Distance = 4.8 mmCOMPLIANTQgs (nC) 3.0 P-ChannelQgd (nC) 9.0 175 C Operating TemperatureConfiguration

 7.2. Size:1448K  vishay
 irfi9520g irfi9520gpbf sihfi9520g.pdf pdf_icon

SIHFI9530G

IRFI9520G, SiHFI9520GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = - 10 V 0.60f = 60 Hz)RoHS*Qg (Max.) (nC) 18 Sink to Lead Creepage Distance = 4.8 mmCOMPLIANTQgs (nC) 3.0 P-ChannelQgd (nC) 9.0 175 C Operating TemperatureConfiguration

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Datasheet: SIHFI730G , SIHFI740G , SIHFI740GLC , SIHFI820G , SIHFI830G , SIHFI840G , SIHFI840GLC , SIHFI9520G , IRFZ48N , SIHFI9540G , SIHFI9610G , SIHFI9620G , SIHFI9630G , SIHFI9634G , SIHFI9640G , SIHFI9Z14G , SIHFI9Z24G .

Keywords - SIHFI9530G MOSFET datasheet

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