SIHFI9530G Datasheet. Specs and Replacement

Type Designator: SIHFI9530G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.7 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 52 nS

Cossⓘ - Output Capacitance: 340 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO-220FP

SIHFI9530G substitution

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SIHFI9530G datasheet

 ..1. Size:1458K  vishay
 irfi9530g sihfi9530g.pdf pdf_icon

SIHFI9530G

IRFI9530G, SiHFI9530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.30 RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 38 COMPLIANT P-Channel Qgs (nC) 6.8 175 C Operating Temperature Qgd (nC) 21 Dynamic dV/... See More ⇒

 ..2. Size:1460K  vishay
 irfi9530gpbf sihfi9530g.pdf pdf_icon

SIHFI9530G

IRFI9530G, SiHFI9530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.30 RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 38 COMPLIANT P-Channel Qgs (nC) 6.8 175 C Operating Temperature Qgd (nC) 21 Dynamic dV/... See More ⇒

 7.1. Size:1446K  vishay
 irfi9520g sihfi9520g.pdf pdf_icon

SIHFI9530G

IRFI9520G, SiHFI9520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = - 10 V 0.60 f = 60 Hz) RoHS* Qg (Max.) (nC) 18 Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qgs (nC) 3.0 P-Channel Qgd (nC) 9.0 175 C Operating Temperature Configuration... See More ⇒

 7.2. Size:1448K  vishay
 irfi9520g irfi9520gpbf sihfi9520g.pdf pdf_icon

SIHFI9530G

IRFI9520G, SiHFI9520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = - 10 V 0.60 f = 60 Hz) RoHS* Qg (Max.) (nC) 18 Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qgs (nC) 3.0 P-Channel Qgd (nC) 9.0 175 C Operating Temperature Configuration... See More ⇒

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Detailed specifications: SIHFI730G, SIHFI740G, SIHFI740GLC, SIHFI820G, SIHFI830G, SIHFI840G, SIHFI840GLC, SIHFI9520G, IRFZ48N, SIHFI9540G, SIHFI9610G, SIHFI9620G, SIHFI9630G, SIHFI9634G, SIHFI9640G, SIHFI9Z14G, SIHFI9Z24G

Keywords - SIHFI9530G MOSFET specs

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