SIHFIB6N60A Datasheet and Replacement
Type Designator: SIHFIB6N60A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 60
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id| ⓘ - Maximum Drain Current: 5.5
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Qg ⓘ - Total Gate Charge: 49
nC
tr ⓘ - Rise Time: 25
nS
Cossⓘ -
Output Capacitance: 180
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75
Ohm
Package:
TO-220FP
-
MOSFET ⓘ Cross-Reference Search
SIHFIB6N60A Datasheet (PDF)
..1. Size:139K vishay
irfib6n60a sihfib6n60a.pdf 
IRFIB6N60A, SiHFIB6N60AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600Requirement AvailableRDS(on) ()VGS = 10 V 0.75 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 49COMPLIANTRuggednessQgs (nC) 13 Fully Characterized Capacitance andQgd (nC) 20Avalanche Voltage and CurrentConfi
..2. Size:141K vishay
sihfib6n60a.pdf
IRFIB6N60A, SiHFIB6N60AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600Requirement AvailableRDS(on) ()VGS = 10 V 0.75 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 49COMPLIANTRuggednessQgs (nC) 13 Fully Characterized Capacitance andQgd (nC) 20Avalanche Voltage and CurrentConfi
8.1. Size:1603K vishay
sihfibc40glc.pdf
IRFIBC40GLC, SiHFIBC40GLCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 1.2f = 60 Hz)RoHS*Qg (Max.) (nC) 39COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 10 Dynamic dV/dt RatingQgd (nC) 19 Low Thermal ResistanceConfigurati
8.2. Size:1453K vishay
sihfibf30g.pdf
IRFIBF30G, SiHFIBF30GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 900Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 3.7RoHS*f = 60 Hz)Qg (Max.) (nC) 78 COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 10 Dynamic dV/dt RatingQgd (nC) 42 Low Thermal ResistanceConfiguration Sin
8.3. Size:143K vishay
irfib7n50a sihfib7n50a.pdf
IRFIB7N50A, SiHFIB7N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500Requirement AvailableRDS(on) ()VGS = 10 V 0.52 Improved Gate, Avalanche and Dynamic dV/dtRoHS*COMPLIANTRuggednessQg (Max.) (nC) 52 Fully Characterized Capacitance andQgs (nC) 13Avalanche Voltage and CurrentQgd (nC) 18 E
8.4. Size:1443K vishay
sihfibc40g.pdf
IRFIBC40G, SiHFIBC40GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available Low Thermal ResistanceRDS(on) ()VGS = 10 V 1.2RoHS* Sink to Lead Creepage Dist. = 4.8 mmQg (Max.) (nC) 60 COMPLIANT High Voltage Isolation = 2.5 kVRMS (t = 60 s,Qgs (nC) 8.3f = 60 Hz)Qgd (nC) 30 Dynamic dV/dt RatingConfiguration Sing
8.5. Size:1534K vishay
irfibe20g sihfibe20g.pdf
IRFIBE20G, SiHFIBE20GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 800Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 6.5f = 60 Hz)RoHS*Qg (Max.) (nC) 38COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 5.0 Dynamic dV/dt RatingQgd (nC) 21 Low Thermal ResistanceConfiguration
8.6. Size:1451K vishay
irfibf30g sihfibf30g.pdf
IRFIBF30G, SiHFIBF30GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 900Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 3.7RoHS*f = 60 Hz)Qg (Max.) (nC) 78 COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 10 Dynamic dV/dt RatingQgd (nC) 42 Low Thermal ResistanceConfiguration Sin
8.7. Size:1395K vishay
irfibe30g sihfibe30g.pdf
IRFIBE30G, SiHFIBE30GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 800Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 3.0f = 60 Hz)RoHS*Qg (Max.) (nC) 78COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 9.6 Dynamic dV/dt RatingQgd (nC) 45 Low Thermal ResistanceConfiguration
8.8. Size:1464K vishay
sihfibc20g.pdf
IRFIBC20G, SiHFIBC20GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 4.4f = 60 Hz)RoHS*Qg (Max.) (nC) 18COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 3.0 Dynamic dV/dt RatingQgd (nC) 8.9 Low Thermal ResistanceConfiguration
8.9. Size:1462K vishay
irfibc20g sihfibc20g.pdf
IRFIBC20G, SiHFIBC20GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 4.4f = 60 Hz)RoHS*Qg (Max.) (nC) 18COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 3.0 Dynamic dV/dt RatingQgd (nC) 8.9 Low Thermal ResistanceConfiguration
8.10. Size:1397K vishay
sihfibe30g.pdf
IRFIBE30G, SiHFIBE30GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 800Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 3.0f = 60 Hz)RoHS*Qg (Max.) (nC) 78COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 9.6 Dynamic dV/dt RatingQgd (nC) 45 Low Thermal ResistanceConfiguration
8.11. Size:1536K vishay
sihfibe20g.pdf
IRFIBE20G, SiHFIBE20GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 800Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 6.5f = 60 Hz)RoHS*Qg (Max.) (nC) 38COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 5.0 Dynamic dV/dt RatingQgd (nC) 21 Low Thermal ResistanceConfiguration
8.12. Size:143K vishay
sihfib5n65a.pdf
IRFIB5N65A, SiHFIB5N65AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 0.93RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19
8.13. Size:1601K vishay
irfibc40glc sihfibc40glc.pdf
IRFIBC40GLC, SiHFIBC40GLCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 1.2f = 60 Hz)RoHS*Qg (Max.) (nC) 39COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 10 Dynamic dV/dt RatingQgd (nC) 19 Low Thermal ResistanceConfigurati
8.14. Size:1441K vishay
irfibc40g sihfibc40g.pdf
IRFIBC40G, SiHFIBC40GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available Low Thermal ResistanceRDS(on) ()VGS = 10 V 1.2RoHS* Sink to Lead Creepage Dist. = 4.8 mmQg (Max.) (nC) 60 COMPLIANT High Voltage Isolation = 2.5 kVRMS (t = 60 s,Qgs (nC) 8.3f = 60 Hz)Qgd (nC) 30 Dynamic dV/dt RatingConfiguration Sing
8.15. Size:1680K vishay
irfibf20g sihfibf20g.pdf
IRFIBF20G, SiHFIBF20GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 900Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 8.0RoHS*f = 60 Hz)COMPLIANTQg (Max.) (nC) 38 Dynamic dV/dt RatingQgs (nC) 4.7 Low Thermal ResistanceQgd (nC) 21 Lead (Pb)-free AvailableConfiguration SingleDESCRIPT
8.16. Size:923K vishay
irfibc30g sihfibc30g.pdf
IRFIBC30G, SiHFIBC30GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 2.2f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 31 Dynamic dV/dt RatingQgs (nC) 4.6 Low Thermal ResistanceQgd (nC) 17 Lead (Pb)-
8.17. Size:141K vishay
irfib5n65a sihfib5n65a.pdf
IRFIB5N65A, SiHFIB5N65AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 0.93RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19
8.18. Size:1682K vishay
sihfibf20g.pdf
IRFIBF20G, SiHFIBF20GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 900Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 8.0RoHS*f = 60 Hz)COMPLIANTQg (Max.) (nC) 38 Dynamic dV/dt RatingQgs (nC) 4.7 Low Thermal ResistanceQgd (nC) 21 Lead (Pb)-free AvailableConfiguration SingleDESCRIPT
8.19. Size:145K vishay
sihfib7n50a.pdf
IRFIB7N50A, SiHFIB7N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500Requirement AvailableRDS(on) ()VGS = 10 V 0.52 Improved Gate, Avalanche and Dynamic dV/dtRoHS*COMPLIANTRuggednessQg (Max.) (nC) 52 Fully Characterized Capacitance andQgs (nC) 13Avalanche Voltage and CurrentQgd (nC) 18 E
8.20. Size:924K vishay
sihfibc30g.pdf
IRFIBC30G, SiHFIBC30GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 2.2f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 31 Dynamic dV/dt RatingQgs (nC) 4.6 Low Thermal ResistanceQgd (nC) 17 Lead (Pb)-
Datasheet: SIHFI9620G
, SIHFI9630G
, SIHFI9634G
, SIHFI9640G
, SIHFI9Z14G
, SIHFI9Z24G
, SIHFI9Z34G
, SIHFIB5N65A
, HY1906P
, SIHFIB7N50A
, SIHFIBC20G
, SIHFIBC30G
, SIHFIBC40G
, SIHFIBC40GLC
, SIHFIBE20G
, SIHFIBE30G
, SIHFIBF20G
.
History: AOSP62530
| PJS6416
| UT3404G-AE3-R
Keywords - SIHFIB6N60A MOSFET datasheet
SIHFIB6N60A cross reference
SIHFIB6N60A equivalent finder
SIHFIB6N60A lookup
SIHFIB6N60A substitution
SIHFIB6N60A replacement
