SIHFIBC20G Datasheet. Specs and Replacement

Type Designator: SIHFIBC20G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 48 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm

Package: TO-220FP

SIHFIBC20G substitution

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SIHFIBC20G datasheet

 ..1. Size:1464K  vishay
 sihfibc20g.pdf pdf_icon

SIHFIBC20G

IRFIBC20G, SiHFIBC20G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 600 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 4.4 f = 60 Hz) RoHS* Qg (Max.) (nC) 18 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 3.0 Dynamic dV/dt Rating Qgd (nC) 8.9 Low Thermal Resistance Configuration... See More ⇒

 ..2. Size:1462K  vishay
 irfibc20g sihfibc20g.pdf pdf_icon

SIHFIBC20G

IRFIBC20G, SiHFIBC20G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 600 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 4.4 f = 60 Hz) RoHS* Qg (Max.) (nC) 18 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 3.0 Dynamic dV/dt Rating Qgd (nC) 8.9 Low Thermal Resistance Configuration... See More ⇒

 7.1. Size:1603K  vishay
 sihfibc40glc.pdf pdf_icon

SIHFIBC20G

IRFIBC40GLC, SiHFIBC40GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 600 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 1.2 f = 60 Hz) RoHS* Qg (Max.) (nC) 39 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 10 Dynamic dV/dt Rating Qgd (nC) 19 Low Thermal Resistance Configurati... See More ⇒

 7.2. Size:1443K  vishay
 sihfibc40g.pdf pdf_icon

SIHFIBC20G

IRFIBC40G, SiHFIBC40G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 600 Available Low Thermal Resistance RDS(on) ( )VGS = 10 V 1.2 RoHS* Sink to Lead Creepage Dist. = 4.8 mm Qg (Max.) (nC) 60 COMPLIANT High Voltage Isolation = 2.5 kVRMS (t = 60 s, Qgs (nC) 8.3 f = 60 Hz) Qgd (nC) 30 Dynamic dV/dt Rating Configuration Sing... See More ⇒

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Detailed specifications: SIHFI9634G, SIHFI9640G, SIHFI9Z14G, SIHFI9Z24G, SIHFI9Z34G, SIHFIB5N65A, SIHFIB6N60A, SIHFIB7N50A, 60N06, SIHFIBC30G, SIHFIBC40G, SIHFIBC40GLC, SIHFIBE20G, SIHFIBE30G, SIHFIBF20G, SIHFIBF30G, SIHFIZ14G

Keywords - SIHFIBC20G MOSFET specs

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