SIHFIBF30G Datasheet. Specs and Replacement
Type Designator: SIHFIBF30G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ -
Output Capacitance: 320 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.7 Ohm
Package: TO-220FP
- MOSFET ⓘ Cross-Reference Search
SIHFIBF30G datasheet
..1. Size:1453K vishay
sihfibf30g.pdf 
IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 900 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 3.7 RoHS* f = 60 Hz) Qg (Max.) (nC) 78 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 10 Dynamic dV/dt Rating Qgd (nC) 42 Low Thermal Resistance Configuration Sin... See More ⇒
..2. Size:1451K vishay
irfibf30g sihfibf30g.pdf
IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 900 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 3.7 RoHS* f = 60 Hz) Qg (Max.) (nC) 78 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 10 Dynamic dV/dt Rating Qgd (nC) 42 Low Thermal Resistance Configuration Sin... See More ⇒
7.1. Size:1680K vishay
irfibf20g sihfibf20g.pdf
IRFIBF20G, SiHFIBF20G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 900 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 8.0 RoHS* f = 60 Hz) COMPLIANT Qg (Max.) (nC) 38 Dynamic dV/dt Rating Qgs (nC) 4.7 Low Thermal Resistance Qgd (nC) 21 Lead (Pb)-free Available Configuration Single DESCRIPT... See More ⇒
7.2. Size:1682K vishay
sihfibf20g.pdf
IRFIBF20G, SiHFIBF20G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 900 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 8.0 RoHS* f = 60 Hz) COMPLIANT Qg (Max.) (nC) 38 Dynamic dV/dt Rating Qgs (nC) 4.7 Low Thermal Resistance Qgd (nC) 21 Lead (Pb)-free Available Configuration Single DESCRIPT... See More ⇒
8.1. Size:1603K vishay
sihfibc40glc.pdf
IRFIBC40GLC, SiHFIBC40GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 600 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 1.2 f = 60 Hz) RoHS* Qg (Max.) (nC) 39 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 10 Dynamic dV/dt Rating Qgd (nC) 19 Low Thermal Resistance Configurati... See More ⇒
8.2. Size:143K vishay
irfib7n50a sihfib7n50a.pdf
IRFIB7N50A, SiHFIB7N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.52 Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness Qg (Max.) (nC) 52 Fully Characterized Capacitance and Qgs (nC) 13 Avalanche Voltage and Current Qgd (nC) 18 E... See More ⇒
8.3. Size:1443K vishay
sihfibc40g.pdf
IRFIBC40G, SiHFIBC40G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 600 Available Low Thermal Resistance RDS(on) ( )VGS = 10 V 1.2 RoHS* Sink to Lead Creepage Dist. = 4.8 mm Qg (Max.) (nC) 60 COMPLIANT High Voltage Isolation = 2.5 kVRMS (t = 60 s, Qgs (nC) 8.3 f = 60 Hz) Qgd (nC) 30 Dynamic dV/dt Rating Configuration Sing... See More ⇒
8.4. Size:1534K vishay
irfibe20g sihfibe20g.pdf
IRFIBE20G, SiHFIBE20G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 800 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 6.5 f = 60 Hz) RoHS* Qg (Max.) (nC) 38 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 5.0 Dynamic dV/dt Rating Qgd (nC) 21 Low Thermal Resistance Configuration ... See More ⇒
8.5. Size:1395K vishay
irfibe30g sihfibe30g.pdf
IRFIBE30G, SiHFIBE30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 800 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 3.0 f = 60 Hz) RoHS* Qg (Max.) (nC) 78 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 9.6 Dynamic dV/dt Rating Qgd (nC) 45 Low Thermal Resistance Configuration ... See More ⇒
8.6. Size:1464K vishay
sihfibc20g.pdf
IRFIBC20G, SiHFIBC20G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 600 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 4.4 f = 60 Hz) RoHS* Qg (Max.) (nC) 18 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 3.0 Dynamic dV/dt Rating Qgd (nC) 8.9 Low Thermal Resistance Configuration... See More ⇒
8.7. Size:1462K vishay
irfibc20g sihfibc20g.pdf
IRFIBC20G, SiHFIBC20G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 600 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 4.4 f = 60 Hz) RoHS* Qg (Max.) (nC) 18 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 3.0 Dynamic dV/dt Rating Qgd (nC) 8.9 Low Thermal Resistance Configuration... See More ⇒
8.8. Size:1397K vishay
sihfibe30g.pdf
IRFIBE30G, SiHFIBE30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 800 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 3.0 f = 60 Hz) RoHS* Qg (Max.) (nC) 78 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 9.6 Dynamic dV/dt Rating Qgd (nC) 45 Low Thermal Resistance Configuration ... See More ⇒
8.9. Size:139K vishay
irfib6n60a sihfib6n60a.pdf
IRFIB6N60A, SiHFIB6N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Requirement Available RDS(on) ( )VGS = 10 V 0.75 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 49 COMPLIANT Ruggedness Qgs (nC) 13 Fully Characterized Capacitance and Qgd (nC) 20 Avalanche Voltage and Current Confi... See More ⇒
8.10. Size:1536K vishay
sihfibe20g.pdf
IRFIBE20G, SiHFIBE20G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 800 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 6.5 f = 60 Hz) RoHS* Qg (Max.) (nC) 38 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 5.0 Dynamic dV/dt Rating Qgd (nC) 21 Low Thermal Resistance Configuration ... See More ⇒
8.11. Size:143K vishay
sihfib5n65a.pdf
IRFIB5N65A, SiHFIB5N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 0.93 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 ... See More ⇒
8.12. Size:1601K vishay
irfibc40glc sihfibc40glc.pdf
IRFIBC40GLC, SiHFIBC40GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 600 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 1.2 f = 60 Hz) RoHS* Qg (Max.) (nC) 39 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 10 Dynamic dV/dt Rating Qgd (nC) 19 Low Thermal Resistance Configurati... See More ⇒
8.13. Size:141K vishay
sihfib6n60a.pdf
IRFIB6N60A, SiHFIB6N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Requirement Available RDS(on) ( )VGS = 10 V 0.75 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 49 COMPLIANT Ruggedness Qgs (nC) 13 Fully Characterized Capacitance and Qgd (nC) 20 Avalanche Voltage and Current Confi... See More ⇒
8.14. Size:1441K vishay
irfibc40g sihfibc40g.pdf
IRFIBC40G, SiHFIBC40G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 600 Available Low Thermal Resistance RDS(on) ( )VGS = 10 V 1.2 RoHS* Sink to Lead Creepage Dist. = 4.8 mm Qg (Max.) (nC) 60 COMPLIANT High Voltage Isolation = 2.5 kVRMS (t = 60 s, Qgs (nC) 8.3 f = 60 Hz) Qgd (nC) 30 Dynamic dV/dt Rating Configuration Sing... See More ⇒
8.15. Size:923K vishay
irfibc30g sihfibc30g.pdf
IRFIBC30G, SiHFIBC30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 600 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 2.2 f = 60 Hz) RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 31 Dynamic dV/dt Rating Qgs (nC) 4.6 Low Thermal Resistance Qgd (nC) 17 Lead (Pb)-... See More ⇒
8.16. Size:141K vishay
irfib5n65a sihfib5n65a.pdf
IRFIB5N65A, SiHFIB5N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 0.93 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 ... See More ⇒
8.17. Size:145K vishay
sihfib7n50a.pdf
IRFIB7N50A, SiHFIB7N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.52 Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness Qg (Max.) (nC) 52 Fully Characterized Capacitance and Qgs (nC) 13 Avalanche Voltage and Current Qgd (nC) 18 E... See More ⇒
8.18. Size:924K vishay
sihfibc30g.pdf
IRFIBC30G, SiHFIBC30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 600 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 2.2 f = 60 Hz) RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 31 Dynamic dV/dt Rating Qgs (nC) 4.6 Low Thermal Resistance Qgd (nC) 17 Lead (Pb)-... See More ⇒
Detailed specifications: SIHFIB7N50A, SIHFIBC20G, SIHFIBC30G, SIHFIBC40G, SIHFIBC40GLC, SIHFIBE20G, SIHFIBE30G, SIHFIBF20G, IRF840, SIHFIZ14G, SIHFIZ24G, SIHFIZ34G, SIHFIZ44G, SIHFIZ48G, SIHFL014, SIHFL110, SIHFL210
Keywords - SIHFIBF30G MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
