All MOSFET. SIHFIZ14G Datasheet

 

SIHFIZ14G Datasheet and Replacement


   Type Designator: SIHFIZ14G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 11 nC
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO-220FP
 

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SIHFIZ14G Datasheet (PDF)

 ..1. Size:1000K  vishay
 irfiz14g sihfiz14g.pdf pdf_icon

SIHFIZ14G

IRFIZ14G, SiHFIZ14GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.20RoHS*f = 60 Hz)COMPLIANTQg (Max.) (nC) 11 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 3.1 175 C Operating TemperatureQgd (nC) 5.8 Dynamic dv/dt RatingConfigur

 ..2. Size:1001K  vishay
 sihfiz14g.pdf pdf_icon

SIHFIZ14G

IRFIZ14G, SiHFIZ14GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.20RoHS*f = 60 Hz)COMPLIANTQg (Max.) (nC) 11 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 3.1 175 C Operating TemperatureQgd (nC) 5.8 Dynamic dv/dt RatingConfigur

 8.1. Size:1392K  vishay
 sihfiz44g.pdf pdf_icon

SIHFIZ14G

IRFIZ44G, SiHFIZ44GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.028f = 60 Hz) RoHS*Qg (Max.) (nC) 95COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 27 175 C Operating TemperatureQgd (nC) 46 Dynamic dV/dt RatingConfigurat

 8.2. Size:1442K  vishay
 irfiz48g sihfiz48g.pdf pdf_icon

SIHFIZ14G

IRFIZ48G, SiHFIZ48GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 0.018f = 60 Hz)RoHS*Qg (Max.) (nC) 110 COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 29 175 C Operating TemperatureQgd (nC) 36 Dynamic dV/dt RatingConfigura

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Datasheet: SIHFIBC20G , SIHFIBC30G , SIHFIBC40G , SIHFIBC40GLC , SIHFIBE20G , SIHFIBE30G , SIHFIBF20G , SIHFIBF30G , 20N60 , SIHFIZ24G , SIHFIZ34G , SIHFIZ44G , SIHFIZ48G , SIHFL014 , SIHFL110 , SIHFL210 , SIHFL214 .

History: US5U3

Keywords - SIHFIZ14G MOSFET datasheet

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