IRL610 PDF and Equivalents Search

 

IRL610 Specs and Replacement

Type Designator: IRL610

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 35 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO220

IRL610 substitution

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IRL610 datasheet

 ..1. Size:186K  1
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IRL610

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 0.1. Size:900K  samsung
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IRL610

Advanced Power MOSFET FEATURES BVDSS = 200 V Logic-Level Gate Drive RDS(on) = 1.5 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 3.3 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 1.185 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings ... See More ⇒

Detailed specifications: IRL531, IRL540, IRL540A, IRL540N, IRL540NL, IRL540NS, IRL541, IRL5602S, IRF2807, IRL610A, IRL611, IRL620, IRL620A, IRL620S, IRL621, IRL630, IRL630A

Keywords - IRL610 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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