All MOSFET. IRL610 Datasheet

 

IRL610 Datasheet and Replacement


   Type Designator: IRL610
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 3.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 6.1 nC
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO220
 

 IRL610 substitution

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IRL610 Datasheet (PDF)

 ..1. Size:186K  1
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IRL610

 0.1. Size:900K  samsung
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IRL610

Advanced Power MOSFETFEATURESBVDSS = 200 V Logic-Level Gate DriveRDS(on) = 1.5 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 3.3 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 1.185 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Ratings

Datasheet: IRL531 , IRL540 , IRL540A , IRL540N , IRL540NL , IRL540NS , IRL541 , IRL5602S , IRFB31N20D , IRL610A , IRL611 , IRL620 , IRL620A , IRL620S , IRL621 , IRL630 , IRL630A .

History: CEM4201

Keywords - IRL610 MOSFET datasheet

 IRL610 cross reference
 IRL610 equivalent finder
 IRL610 lookup
 IRL610 substitution
 IRL610 replacement

 

 
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