IRF7665S2TR1PBF Datasheet and Replacement
Type Designator: IRF7665S2TR1PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.1 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 6.4 nS
Cossⓘ - Output Capacitance: 112 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.051 Ohm
Package: DIRECTFET
IRF7665S2TR1PBF substitution
IRF7665S2TR1PBF Datasheet (PDF)
irf7665s2tr1pbf irf7665s2trpbf.pdf
PD - 96239DIGITAL AUDIO MOSFETIRF7665S2TRPbFIRF7665S2TR1PbFFeatures Key Parameters Key parameters optimized for Class-D audio amplifierVDS100 V applicationsRDS(on) typ. @ VGS = 10V 51 m Low RDS(on) for improved efficiency Low Qg for better THD and improved efficiencyQg typ.8.3 nC Low Qrr for better THD and lower EMI RG(int) typ.3.5 Low package st
auirf7665s2tr.pdf
PD - 96286BAUIRF7665S2TRAUTOMOTIVE GRADEAUIRF7665S2TR1DirectFET Power MOSFET Advanced Process TechnologyV(BR)DSS100V Optimized for Class D Audio Amplifier Applications Low Rds(on) for Improved Efficiency RDS(on) typ.51m Low Qg for Better THD and Improved Efficiencymax. 62m Low Qrr for Better THD and Lower EMIRG (typical)3.5 Low P
auirf7665s2tr.pdf
AUTOMOTIVE GRADE AUIRF7665S2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 100V Optimized for Class D Audio Amplifier Applications Low Rds(on) for Improved Efficiency RDS(on) typ. 51m Low Qg for Better THD and Improved Efficiency max. 62m Low Qrr for Better THD and Lower EMI RG (typical) 3.5 Low Parasiti
Datasheet: SIHFP150 , SIHFP17N50L , SIHFP21N60L , SIHFP22N50A , SIHFP22N60K , IRF7606PBF , IRF7607PBF , IRF7663PBF , IRF9540 , IRF7665S2TRPBF , IRF7704GPBF , IRF7704PBF , IRF7705GPBF , IRF7705PBF , IRF7706GPBF , IRF7706PBF , IRF7707 .
Keywords - IRF7665S2TR1PBF MOSFET datasheet
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IRF7665S2TR1PBF substitution
IRF7665S2TR1PBF replacement
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