IRF7665S2TR1PBF Datasheet. Specs and Replacement
Type Designator: IRF7665S2TR1PBF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.1 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6.4 nS
Cossⓘ - Output Capacitance: 112 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.051 Ohm
Package: DIRECTFET
IRF7665S2TR1PBF substitution
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IRF7665S2TR1PBF datasheet
irf7665s2tr1pbf irf7665s2trpbf.pdf
PD - 96239 DIGITAL AUDIO MOSFET IRF7665S2TRPbF IRF7665S2TR1PbF Features Key Parameters Key parameters optimized for Class-D audio amplifier VDS 100 V applications RDS(on) typ. @ VGS = 10V 51 m Low RDS(on) for improved efficiency Low Qg for better THD and improved efficiency Qg typ. 8.3 nC Low Qrr for better THD and lower EMI RG(int) typ. 3.5 Low package st... See More ⇒
auirf7665s2tr.pdf
PD - 96286B AUIRF7665S2TR AUTOMOTIVE GRADE AUIRF7665S2TR1 DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 100V Optimized for Class D Audio Amplifier Applications Low Rds(on) for Improved Efficiency RDS(on) typ. 51m Low Qg for Better THD and Improved Efficiency max. 62m Low Qrr for Better THD and Lower EMI RG (typical) 3.5 Low P... See More ⇒
auirf7665s2tr.pdf
AUTOMOTIVE GRADE AUIRF7665S2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 100V Optimized for Class D Audio Amplifier Applications Low Rds(on) for Improved Efficiency RDS(on) typ. 51m Low Qg for Better THD and Improved Efficiency max. 62m Low Qrr for Better THD and Lower EMI RG (typical) 3.5 Low Parasiti... See More ⇒
Detailed specifications: SIHFP150, SIHFP17N50L, SIHFP21N60L, SIHFP22N50A, SIHFP22N60K, IRF7606PBF, IRF7607PBF, IRF7663PBF, IRF9540, IRF7665S2TRPBF, IRF7704GPBF, IRF7704PBF, IRF7705GPBF, IRF7705PBF, IRF7706GPBF, IRF7706PBF, IRF7707
Keywords - IRF7665S2TR1PBF MOSFET specs
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IRF7665S2TR1PBF replacement
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