All MOSFET. IRF7706PBF Datasheet

 

IRF7706PBF Datasheet and Replacement


   Type Designator: IRF7706PBF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.51 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 339 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TSSOP-8
      - MOSFET Cross-Reference Search

 

IRF7706PBF Datasheet (PDF)

 ..1. Size:238K  international rectifier
irf7706pbf.pdf pdf_icon

IRF7706PBF

PD-96023AIRF7706PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl P-Channel MOSFET -30V 22m@VGS = -10V -7.0Al Very Small SOIC Package36m@VGS = -4.5V -5.6Al Low Profile (

 7.1. Size:234K  international rectifier
irf7706gpbf.pdf pdf_icon

IRF7706PBF

PD-96143AIRF7706GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETVDSS RDS(on) max IDl Very Small SOIC Package -30V 22m@VGS = -10V -7.0Al Low Profile (

 7.2. Size:152K  international rectifier
irf7706.pdf pdf_icon

IRF7706PBF

PD -94003IRF7706HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET -30V 22m@VGS = -10V -7.0A Very Small SOIC Package36m@VGS = -4.5V -5.6A Low Profile (

 8.1. Size:141K  international rectifier
irf7701.pdf pdf_icon

IRF7706PBF

PD - 93940IRF7701HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET0.011@VGS = -4.5V -10A Very Small SOIC Package-12V 0.015@VGS = -2.5V -8.5A Low Profile (

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: BRCS4803SC | 2N5452 | HGN098N10SL | 2SK2867 | STD3NK60ZD | P1504BVG | BSO033N03MSG

Keywords - IRF7706PBF MOSFET datasheet

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