IRF7769L1 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF7769L1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 200 nC
trⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 1240 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: DIRECTFET
IRF7769L1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF7769L1 Datasheet (PDF)
irf7769l1.pdf
IRF7769L1TRPbFDirectFET Power MOSFET l RoHS Compliant, Halogen Free Typical values (unless otherwise specified)l Lead-Free (Qualified up to 260C Reflow) l Ideal for High Performance Isolated ConverterVDSS VGS RDS(on) Primary Switch Socket100V min 20V max 2.8m@ 10Vl Optimized for Synchronous RectificationQg tot Qgd Vgs(th) l Low Conduction Losses200nC 110
auirf7769l2.pdf
AUTOMOTIVE GRADEAUIRF7769L2TRAutomotive DirectFET Power MOSFET V(BR)DSS Advanced Process Technology 100V Optimized for Automotive Motor Drive, DC-DC andRDS(on) typ.2.8mother Heavy Load Applications Exceptionally Small Footprint and Low Profile max. 3.5m High Power DensityID (Silicon Limited)124A Low Parasitic ParametersQg 200nC Dual Sid
irf7769l2tr1pbf irf7769l2trpbf.pdf
PD - 97413BIRF7769L2TRPbFIRF7769L2TR1PbFDirectFET Power MOSFET l RoHS Compliant, Halogen Free Typical values (unless otherwise specified)l Lead-Free (Qualified up to 260C Reflow)l Ideal for High Performance Isolated ConverterVDSS VGS RDS(on) Primary Switch Socket100V min 20V max 2.8m@ 10Vl Optimized for Synchronous RectificationQg tot Qgd Vgs(th) l Low Co
auirf7769l2tr.pdf
AUTOMOTIVE GRADE AUIRF7769L2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 100V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 2.8m Exceptionally Small Footprint and Low Profile max. 3.5m High Power Density ID (Silicon Limited) 124A Low Parasitic Parameters Qg (typ
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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