All MOSFET. IRF7807APBF Datasheet

 

IRF7807APBF Datasheet and Replacement


   Type Designator: IRF7807APBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 8.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 17 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SO-8
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IRF7807APBF Datasheet (PDF)

 6.1. Size:257K  international rectifier
irf7807trpbf-1 irf7807atrpbf-1.pdf pdf_icon

IRF7807APBF

IRF7807TRPbF-1IRF7807ATRPbF-1HEXFET Chip-Set for DC-DC ConvertersAVDS 30 V1 8S DRDS(on) max 2 7S D25 m(@V = 4.5V)GS3 6S DQg (typical) 12 nC4 5G DID 8.3 A(@T = 25C) Top View SO-8AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Co

 6.2. Size:823K  cn vbsemi
irf7807atr.pdf pdf_icon

IRF7807APBF

IRF7807ATRwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

 7.1. Size:165K  international rectifier
irf7807d1.pdf pdf_icon

IRF7807APBF

PD- 93761IRF7807D1FETKY MOSFET / SCHOTTKY DIODE Co-Pack N-channel HEXFET Power MOSFET1 8A/S K/Dand Schottky Diode2 7A/S K/D Ideal for Synchronous Rectifiers in DC-DC3 6Converters Up to 5A OutputA/S K/D Low Conduction Losses45G K/D Low Switching LossesD Low Vf Schottky RectifierSO-8Top ViewDescriptionThe FETKY family of Co-Pac

 7.2. Size:239K  international rectifier
irf7807.pdf pdf_icon

IRF7807APBF

PD 91747CIRF7807/IRF7807AHEXFET Chip-Set for DC-DC Converters N Channel Application Specific MOSFETsA Ideal for Mobile DC-DC Converters 1 8S D Low Conduction Losses2 7S D Low Switching Losses3 6S DDescription4 5G DThese new devices employ advanced HEXFET PowerMOSFET technology to achieve an unprecedentedSO-8 Top Viewbalance of on-resistanc

Datasheet: IRF7799L2TR1PBF , IRF7799L2TRPBF , IRF7805PBF , IRF7805PBF-1 , IRF7805QPBF , IRF7805ZGPBF , IRF7805ZPBF , IRF7805ZPBF-1 , IRF830 , IRF7807D1PBF , IRF7807D2PBF , IRF7807PBF-1 , IRF7807VD1PBF , IRF7807VD1PBF-1 , IRF7807VD2PBF , IRF7807VPBF , IRF7807VPBF-1 .

History: 2SK2707 | ELM13401CA | 12N65KG-TF1-T | 2SK2884B | R5016ANJ | DH150N12B | BSB280N15NZ3G

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