IRF7807VPBF-1 Datasheet. Specs and Replacement

Type Designator: IRF7807VPBF-1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1.2 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: SO-8

IRF7807VPBF-1 substitution

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IRF7807VPBF-1 datasheet

 6.1. Size:115K  international rectifier
 irf7807vd2.pdf pdf_icon

IRF7807VPBF-1

PD-94079 IRF7807VD2 FETKY MOSFET / SCHOTTKY DIODE Co-Pack N-channel HEXFET Power MOSFET 1 8 and Schottky Diode A/S K/D Ideal for Synchronous Rectifiers in DC-DC 2 7 A/S K/D Converters Up to 5A Output 3 6 A/S K/D Low Conduction Losses 4 5 Low Switching Losses G K/D D Low Vf Schottky Rectifier Top View Description SO-8 The FETKY family of Co-Pack H... See More ⇒

 6.2. Size:117K  international rectifier
 irf7807vd1.pdf pdf_icon

IRF7807VPBF-1

PD-94078 IRF7807VD1 FETKY MOSFET / SCHOTTKY DIODE Co-Pack N-channel HEXFET Power MOSFET 1 8 and Schottky Diode A/S K/D Ideal for Synchronous Rectifiers in DC-DC 2 7 A/S K/D Converters Up to 5A Output 3 6 A/S K/D Low Conduction Losses 4 5 Low Switching Losses G K/D D Low Vf Schottky Rectifier Top View Description SO-8 The FETKY family of Co-Pack H... See More ⇒

 6.3. Size:213K  international rectifier
 irf7807vtrpbf-1.pdf pdf_icon

IRF7807VPBF-1

IRF7807VTRPbF-1 HEXFET Power MOSFET VDS 30 V A 1 8 S D RDS(on) max 25 m 2 7 (@V = 4.5V) S D GS Qg (typical) 9.5 nC 3 6 S D ID 4 5 8.3 A G D (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmen... See More ⇒

 6.4. Size:159K  international rectifier
 irf7807v.pdf pdf_icon

IRF7807VPBF-1

PD-94108 IRF7807V N Channel Application Specific MOSFET Ideal for Mobile DC-DC Converters Low Conduction Losses A Low Switching Losses 1 8 S D 2 7 Description S D This new device employs advanced HEXFET Power 3 6 S D MOSFET technology to achieve an unprecedented 4 5 balance of on-resistance and gate charge. The G D reduction of conduction and switching losses m... See More ⇒

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Detailed specifications: IRF7807APBF, IRF7807D1PBF, IRF7807D2PBF, IRF7807PBF-1, IRF7807VD1PBF, IRF7807VD1PBF-1, IRF7807VD2PBF, IRF7807VPBF, IRF2807, IRF7807ZPBF, IRF7809A, IRF7809AVPBF, IRF7809AVPBF-1, IRF7811A, IRF7811APBF, IRF7811AVPBF, IRF7811AVPBF-1

Keywords - IRF7807VPBF-1 MOSFET specs

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