All MOSFET. IRF7811AVPBF Datasheet

 

IRF7811AVPBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF7811AVPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 10.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 723 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: SO-8

 IRF7811AVPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF7811AVPBF Datasheet (PDF)

 5.1. Size:86K  international rectifier
irf7811av.pdf

IRF7811AVPBF
IRF7811AVPBF

PD-94009IRF7811AVIRF7811AV N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction LossesA Low Switching LossesA1 8S D Minimizes Parallel MOSFETs for high currentapplications2 7S D3 6DescriptionS DThis new device employs advanced HEXFET Power4 5G DMOSFET technology to achieve an unprecedentedbalance of

 5.2. Size:822K  cn vbsemi
irf7811avtr.pdf

IRF7811AVPBF
IRF7811AVPBF

IRF7811AVTRwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

 7.1. Size:126K  international rectifier
irf7809 irf7811.pdf

IRF7811AVPBF
IRF7811AVPBF

PD - 93812PD - 93813IRF7809/IRF7811IRF7809/IRF7811Provisional Datasheet N-Channel Application-Specific MOSFETsHEXFET Chipset for DC-DC Converters Ideal for CPU Core DC-DC Converters New CopperStrapTM Interconnect for LowerAAElectrical and Thermal Resistance1 8S D Low Conduction Losses2 7 Low Switching Losses S D Minimizes Parallel MOSFETs fo

 7.2. Size:185K  international rectifier
irf7811w.pdf

IRF7811AVPBF
IRF7811AVPBF

PD-94031DIRF7811WHEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction LossesA1 8 Low Switching LossesS D 100% Tested for RG2 7S D3 6S DDescription4 5G DThis new device employs advanced HEXFET PowerMOSFET technology to achieve an unprecedentedbalance of on-resist

 7.3. Size:185K  international rectifier
irf7811wpbf.pdf

IRF7811AVPBF
IRF7811AVPBF

PD- 95023CIRF7811WPbFHEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction LossesA1 8 Low Switching LossesS D 100% Tested for Rg2 7S D Lead-Free3 6S D4 5G DDescriptionThis new device employs advanced HEXFET PowerSO-8 Top ViewMOSFET technology to achieve an u

 7.4. Size:825K  cn vbsemi
irf7811wtr.pdf

IRF7811AVPBF
IRF7811AVPBF

IRF7811WTRwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

Datasheet: IRF7807VPBF , IRF7807VPBF-1 , IRF7807ZPBF , IRF7809A , IRF7809AVPBF , IRF7809AVPBF-1 , IRF7811A , IRF7811APBF , IRF9540N , IRF7811AVPBF-1 , IRF7811WPBF , IRF7811W , IRF7815PBF , IRF7820PBF , IRF7821GPBF , IRF7821PBF , IRF7821PBF-1 .

 

 
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