IRL630
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRL630
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 74
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 40(max)
nC
trⓘ - Rise Time: 57
nS
Cossⓘ -
Output Capacitance: 220
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4
Ohm
Package:
TO220
IRL630
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRL630
Datasheet (PDF)
..1. Size:1360K international rectifier
irl630pbf.pdf 
PD- 95756IRL630PbF Lead-Free8/24/04Document Number: 91303 www.vishay.com1IRL630PbFDocument Number: 91303 www.vishay.com2IRL630PbFDocument Number: 91303 www.vishay.com3IRL630PbFDocument Number: 91303 www.vishay.com4IRL630PbFDocument Number: 91303 www.vishay.com5IRL630PbFDocument Number: 91303 www.vishay.com6IRL630PbFDocument Number: 91303 www.
..2. Size:150K international rectifier
irl630.pdf
PD -9.1255IRL630HEXFET Power MOSFETDynamic dv/dt RatingRepetitive Avalanche RatedVDSS = 200VLogic-Level Gate DriveRDS(ON) Specified at VGS = 4V & 5VRDS(on) = 0.40150C Operating TemperatureFast SwitchingEase of parallelingID = 9.0ADescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switching,
..3. Size:2277K vishay
irl630 sihl630.pdf
IRL630, SiHL630Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200 VAvailable Repetitive Avalanche RatedRDS(on) ()VGS = 5 V 0.40RoHS* Logic Level Gate DriveCOMPLIANTQg (Max.) (nC) 40 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 5.5 150 C Operating TemperatureQgd (nC) 24 Fast SwitchingConfiguration Sing
..4. Size:2205K vishay
irl630pbf sihl630.pdf
IRL630, SiHL630Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200 VAvailable Repetitive Avalanche RatedRDS(on) ()VGS = 5 V 0.40RoHS* Logic Level Gate DriveCOMPLIANTQg (Max.) (nC) 40 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 5.5 150 C Operating TemperatureQgd (nC) 24 Fast SwitchingConfiguration Sing
0.1. Size:168K international rectifier
irl630s.pdf
PD - 9.1254IRL630SHEXFET Power MOSFETSurface MountAvailable in Tape & ReelVDSS = 200VDynamic dv/dt RatingRepetitive Avalanche RatedRDS(on) = 0.40Logic-Level Gate DriveRDS(ON) Specified at VGS = 4V & 5V150C Operating TemperatureID = 9.0ADescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switc
0.2. Size:911K samsung
irl630a.pdf
Advanced Power MOSFETFEATURESBVDSS = 200 V Logic-Level Gate DriveRDS(on) = 0.4 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 9 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.335 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Ratings
0.3. Size:218K vishay
irl630s sihl630s.pdf
IRL630S, SiHL630SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 200 Surface MountRDS(on) ()VGS = 5 V 0.40 Available in Tape and Reel Qg (Max.) (nC) 40 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 5.5 Logic-Level Gate DriveQgd (nC) 24 RDS(on) Specified at VGS = 4 V a
0.4. Size:244K vishay
irl630spbf sihl630s.pdf
IRL630S, SiHL630SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 200 Surface MountRDS(on) ()VGS = 5 V 0.40 Available in Tape and Reel Qg (Max.) (nC) 40 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 5.5 Logic-Level Gate DriveQgd (nC) 24 RDS(on) Specified at VGS = 4 V a
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